Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Alexander Puretzky"'
Autor:
Riya Sebait, Roberto Rosati, Seok Joon Yun, Krishna P. Dhakal, Samuel Brem, Chandan Biswas, Alexander Puretzky, Ermin Malic, Young Hee Lee
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract We report the emergence of dark-excitons in transition-metal-dichalcogenide (TMD) heterostructures that strongly rely on the stacking sequence, i.e., momentum-dark K-Q exciton located exclusively at the top layer of the heterostructure. The
Externí odkaz:
https://doaj.org/article/b4711f52bbe341899217fac3d920a8a6
Autor:
Ivan Vlassiouk, Sergei Smirnov, Alexander Puretzky, Olugbenga Olunloyo, David B. Geohegan, Ondrej Dyck, Andrew R. Lupini, Raymond R. Unocic, Harry M. Meyer III, Kai Xiao, Dayrl Briggs, Nickolay Lavrik, Jong Keum, Ercan Cakmak, Sumner B. Harris, Marti Checa, Liam Collins, John Lasseter, Reece Emery, John Rayle, Philip D. Rack, Yijing Stehle, Pavan Chaturvedi, Piran R. Kidambi, Gong Gu, Ilia Ivanov
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier coating has somewhat faded. A chemical vapor deposition p
Externí odkaz:
https://doaj.org/article/c55af206caa145a694123f92d81cf42d
Autor:
Andrius Dziaugys, Kyle Kelley, John A. Brehm, Lei Tao, Alexander Puretzky, Tianli Feng, Andrew O’Hara, Sabine Neumayer, Marius Chyasnavichyus, Eugene A. Eliseev, Juras Banys, Yulian Vysochanskii, Feng Ye, Bryan C. Chakoumakos, Michael A. Susner, Michael A. McGuire, Sergei V. Kalinin, Panchapakesan Ganesh, Nina Balke, Sokrates T. Pantelides, Anna N. Morozovska, Petro Maksymovych
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Domain walls in van der Waals layered ferrielectric CuInP2Se6 exhibit piezoelectric response. This striking departure from traditional ferroelectric behavior is ascribed to a partially polarized antiferroelectric state, where the domain wall separate
Externí odkaz:
https://doaj.org/article/3ae3d75d64764025a435dca01b8293b0
Autor:
Weijun Luo, Akinola D. Oyedele, Nannan Mao, Alexander Puretzky, Kai Xiao, Liangbo Liang, Xi Ling
Publikováno v:
ACS Physical Chemistry Au. 2:482-489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdddd8dece7d3bc95854acbc738db76b
https://doi.org/10.1021/acsphyschemau.2c00007
https://doi.org/10.1021/acsphyschemau.2c00007
Autor:
Sumner Harris, Christopher Rouleau, Alexander Puretzky, Seok Joon Yun, Liangbo Liang, Ondrej Dyck, Tom Berlijn, Gyula Eres, Gerd Duscher, Austin Houston, Yu-Chuan Lin, Mina Yoon, Kai Xiao, David Geohegan
Publikováno v:
Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3091846cb3c5b2bba990a32e22260f8d
https://doi.org/10.1117/12.2650571
https://doi.org/10.1117/12.2650571
Autor:
Haoyue Zhu, Nadire nayir, Tanushree Choudhury, Anushka Bansal, Benjamin Huet, Kunyan Zhang, Alexander Puretzky, Saiphaneendra Bachu, Krystal York, Thomas Mc Knight, Nicholas Trainor, Ke Wang, Robert Makin, Steven Durbin, Shengxi Huang, Nasim Alem, Vincent Crespi, Adri Van Duin, Joan Redwing
Epitaxial growth of 2D transition metal dichalcogenides (TMDs) on sapphire has emerged as a promising route to wafer-scale single crystal films. Steps on the sapphire act as sites for TMD nucleation and can impart a preferred domain orientation resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f53dd40bc2b216c741506ad15bc5c41
https://doi.org/10.21203/rs.3.rs-2180223/v1
https://doi.org/10.21203/rs.3.rs-2180223/v1
Autor:
David Curie, Jaron T. Krogel, Lukas Cavar, Abhishek Solanki, Pramey Upadhyaya, Tongcang Li, Yun-Yi Pai, Michael Chilcote, Vasudevan Iyer, Alexander Puretzky, Ilia Ivanov, Mao-Hua Du, Fernando Reboredo, Benjamin Lawrie
Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::365e64d52814faa91008fc9404415502
http://arxiv.org/abs/2203.10075
http://arxiv.org/abs/2203.10075
Publikováno v:
physica status solidi (b). 259:2100583
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1264d0c224751955db2494592d06f486
https://doi.org/10.1002/pssb.202100583
https://doi.org/10.1002/pssb.202100583
Autor:
Yuanmu Yang, Wenyi Wang, Abdelaziz Boulesbaa, Ivan I. Kravchenko, DayrlP. Briggs, Alexander Puretzky, David Geohegan, Jason Valentine
Publikováno v:
Nano Letters; Nov2015, Vol. 15 Issue 11, p7388-7393, 6p
Autor:
Geohegan, Db, Alexander Puretzky, Fan, X., Guillorn, Ma, Simpson, Ml, Merkulov, Vi, Pennycook, Sj, Sullivan, Jp, Robertson, J., Zhou, O., Allen, Tb, Coll, Bf
Publikováno v:
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::445fe67cca0a90e377037d11b9fbcb74
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000089239300001&KeyUID=WOS:000089239300001
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000089239300001&KeyUID=WOS:000089239300001