Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Alexana Roshko"'
Publikováno v:
Crystals, Vol 8, Iss 9, p 366 (2018)
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice
Externí odkaz:
https://doaj.org/article/7e13201d95264f88b79e974a6b2d1c2f
Autor:
Paul Blanchard, Matt Brubaker, Todd Harvey, Alexana Roshko, Norman Sanford, Joel Weber, Kris A. Bertness
Publikováno v:
Crystals, Vol 8, Iss 4, p 178 (2018)
While GaN nanowires (NWs) offer an attractive architecture for a variety of nanoscale optical, electronic, and mechanical devices, defects such as crystal polarity inversion domains (IDs) can limit device performance. Moreover, the formation of such
Externí odkaz:
https://doaj.org/article/28034416cc0643fe804d8629c5dd54e0
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XIX.
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Publikováno v:
Microscopy and Microanalysis. 28:782-783
Autor:
Jeff Chiles, Ilya Charaev, Robert Lasenby, Masha Baryakhtar, Junwu Huang, Alexana Roshko, George Burton, Marco Colangelo, Ken Van Tilburg, Asimina Arvanitaki, Sae Woo Nam, Karl K. Berggren
Publikováno v:
Physical Review Letters
Uncovering the nature of dark matter is one of the most important goals of particle physics. Light bosonic particles, such as the dark photon, are well-motivated candidates: they are generally long-lived, weakly interacting, and naturally produced in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddd839f1996ca2822407541e8c12529a
Autor:
Matt D, Brubaker, Kristen L, Genter, Joel C, Weber, Bryan T, Spann, Alexana, Roshko, Paul T, Blanchard, Todd E, Harvey, Kris A, Bertness
Publikováno v:
Proc SPIE Int Soc Opt Eng
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW
Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C
Autor:
Jaclyn K, Sprenger, Huaxing, Sun, Andrew S, Cavanagh, Alexana, Roshko, Paul T, Blanchard, Steven M, George
Publikováno v:
J Phys Chem C Nanomater Interfaces
Electron-enhanced atomic layer deposition (EE-ALD) was used to deposit boron nitride (BN) thin films at room temperature and 100 °C using sequential exposures of borazine (B(3)N(3)H(6)) and electrons. Electron-stimulated desorption (ESD) of hydrogen
Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C
Autor:
Paul T. Blanchard, Jaclyn K. Sprenger, Andrew S. Cavanagh, Huaxing Sun, Steven M. George, Alexana Roshko
Publikováno v:
The Journal of Physical Chemistry C. 122:9455-9464
Electron-enhanced atomic layer deposition (EE-ALD) was used to deposit boron nitride (BN) thin films at room temperature and 100 °C using sequential exposures of borazine (B3N3H6) and electrons. Electron-stimulated desorption (ESD) of hydrogen surfa
Autor:
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Roy H. Geiss, Todd E. Harvey, Kris A. Bertness, Igor Levin
Publikováno v:
Journal of Materials Research. 32:936-946
A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron diffraction (CBED) in TEM mode and annular bright field (ABF) imaging in aberration corrected