Reliability of wide bandgap semiconductor devices under unconventional mode conduction

Autor: Alexakis, Petros

The use of power electronics is increasing in an exponential form. The need of power devices to be faster, block higher voltages and reduce their losses is leading to a fundamental change in the device architecture and choice of material. Gallium nit

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Finite element modelling and experimental characterisation of paralleled SiC MOSFET failure under avalanche mode conduction.

Autor: Hu, Ji, Alatise, Olayiwola, Ortiz-Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li, Mawby, Phil

Publikováno v: 2015 IEEE MTT-S 2015 International Microwave Workshop Series on RF & Wireless Technologies for Biomedical & Healthcare Applications (IMWS-BIO); 2015, p1-9, 9p

Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients.

Autor: Jahdi, Saeed, Alatise, Olayiwola, Alexakis, Petros, Ran, Li, Mawby, Phil

Publikováno v: 2014 IEEE Energy Conversion Congress & Exposition (ECCE); 2014, p2817-2823, 7p

Modeling power converters using hard switched silicon carbide MOSFETs and Schottky barrier diodes.

Autor: Alexakis, Petros, Alatise, Olayiwola, Ran, Li, Mawby, Phillip

Publikováno v: 2013 15th European Conference on Power Electronics & Applications (EPE); 2013, p1-9, 9p