Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Alex Z. Kattamis"'
Publikováno v:
2020 IEEE Symposium on Product Compliance Engineering - (SPCE Portland).
Damage to electrical power cables caused by complete or partial immersion in flood water in residential and commercial settings is a potentially serious safety concern. Electrical cables with unsealed ends are known to be susceptible to moisture infi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a75dd938a0850d6c97578490946422d
https://doi.org/10.1109/spce50045.2020.9296167
https://doi.org/10.1109/spce50045.2020.9296167
Publikováno v:
Journal of the Korean Physical Society. 54:415-420
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a40cc46e198959dfab5a0944d81577b9
https://doi.org/10.3938/jkps.54.415
https://doi.org/10.3938/jkps.54.415
Flexible electronics are gaining interest and viability. This chapter traces a path to current state-of-the-art flexible devices. It examines key substrate issues and the suitability of metal foil properties, including temperature and process ruggedn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8257261939b36b77fa4c0e866ed9bf1
https://doi.org/10.1016/b978-1-78242-035-4.00013-0
https://doi.org/10.1016/b978-1-78242-035-4.00013-0
Autor:
Brian D'Andrade, Alex Z. Kattamis
Publikováno v:
Optics and Photonics for Advanced Energy Technology.
Steel foil tolerance to high temperature processing, dimensional stability, chemical resistance, low moisture and oxygen permeability are characteristics that in combination with top emission organic LEDs are needed for flexible solid state lighting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66842d12c77244533ef01fae2d075e1d
https://doi.org/10.1364/energy.2009.wb4
https://doi.org/10.1364/energy.2009.wb4
Autor:
Ke Long, Sigurd Wagner, James C. Sturm, Kunigunde H. Cherenack, Alex Z. Kattamis, I-Chun Cheng
Publikováno v:
MRS Proceedings. 1078
The prospect of large-area electronics on polymers, for flexible applications requires a study of thin film fracture mechanisms. To fabricate thin-film transistor (TFT) backplanes on polymer foils the substrate must first be passivated to protect the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30291b735006f9495bec0248d202c67f
https://doi.org/10.1557/proc-1078-m14-02
https://doi.org/10.1557/proc-1078-m14-02
Publikováno v:
MRS Proceedings. 1066
We have developed a fabrication process for amorphous-silicon thin-film transistors (a-Si:H TFTs) on free-standing clear plastic substrates at temperatures up to 300°C. The 300°C fabrication process is made possible by using a unique clear plastic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27920762ac093eaf189f161acda4266
https://doi.org/10.1557/proc-1066-a20-03
https://doi.org/10.1557/proc-1066-a20-03
Publikováno v:
SPIE Proceedings.
Key technical issues of flexible stainless steel foil substrates are addressed for OLED display backplane applications. Surface roughness and corresponding planarization layer technology development will be the major factors for the stainless steel f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb9ff8a14d52245da48049568b42f01
https://doi.org/10.1117/12.737213
https://doi.org/10.1117/12.737213
Publikováno v:
MRS Proceedings. 910
We have fabricated pixel circuits consisting of two bottom-gate staggered source-drain amorphous silicon thin-film transistors (a-Si:H TFTs) on flexible stainless steel foils. Stainless steel is attractive because it allows for high processing temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72f6d0098a91653f437bed5a67232456
https://doi.org/10.1557/proc-0910-a16-03-l09-03
https://doi.org/10.1557/proc-0910-a16-03-l09-03
Publikováno v:
MRS Proceedings. 814
Nanocrystalline silicon is a candidate material for fabricating thin film transistors with high carrier mobilities on plastic substrates. A major issue in the processing of nanocrystalline silicon thin film transistors (nc-Si:H TFTs) at ultralow temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb49be5910a0001908a79db45606c29
https://doi.org/10.1557/proc-814-i10.14
https://doi.org/10.1557/proc-814-i10.14
Autor:
Ke Long, Kunigunde H. Cherenack, Alex Z. Kattamis, B. Hekmatshoar, Sigurd Wagner, James C. Sturm
Publikováno v:
Applied Physics Letters. 93:032103
Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5×105V∕cm, the threshold voltage shift extrapolated to only ∼1.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf3467f5c8cf881701469ca9d375eb3f
https://doi.org/10.1063/1.2963481
https://doi.org/10.1063/1.2963481