Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Alex Wertheim"'
Autor:
Scott M. Lewis, Guy A. DeRose, Hayden R. Alty, Matthew S. Hunt, Nathan Lee, James A. Mann, Richard Grindell, Alex Wertheim, Lucia De Rose, Antonio Fernandez, Christopher A. Muryn, George F. S. Whitehead, Grigore A. Timco, Axel Scherer, Richard E. P. Winpenny
Publikováno v:
Antonio Fernandez Mato
Lewis, S M, DeRose, G A, Alty, H R, Hunt, M S, Lee, N, Mann, J A, Grindell, R, Wertheim, A, De Rose, L, Fernandez, A, Muryn, C A, Whitehead, G F S, Timco, G A, Scherer, A & Winpenny, R E P 2022, ' Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography ', Advanced Functional Materials, vol. 32, no. 32, 2202710 . https://doi.org/10.1002/adfm.202202710
Lewis, S M, DeRose, G A, Alty, H R, Hunt, M S, Lee, N, Mann, J A, Grindell, R, Wertheim, A, De Rose, L, Fernandez, A, Muryn, C A, Whitehead, G F S, Timco, G A, Scherer, A & Winpenny, R E P 2022, ' Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography ', Advanced Functional Materials, vol. 32, no. 32, 2202710 . https://doi.org/10.1002/adfm.202202710
A new class of electron bean negative tone resist materials has been developed based on heterometallic rings. The initial resist performance demonstrates a resolution of 15 nm half-pitch but at the expense of a low sensitivity. To improve sensitivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44d4c67f71d03b797d4b219a30c11339
https://resolver.caltech.edu/CaltechAUTHORS:20220718-951245300
https://resolver.caltech.edu/CaltechAUTHORS:20220718-951245300
Autor:
Grigore A. Timco, Richard E. P. Winpenny, Jarvis Li, Axel Scherer, Matthew S. Hunt, Hayden R. Alty, Stephen G. Yeates, Alex Wertheim, Scott M. Lewis, Lucia B. De Rose, Guy A. DeRose
Publikováno v:
Lewis, S M, Hunt, M, Derose, G, Alty, H, Li, J, Wertheim, A, Derose, L, Timco, G A, Scherer, A, Yeates, S G & Winpenny, R E P 2019, ' Plasma-etched pattern transfer of sub-10 nm structures using a metal–organic resist and helium ion beam lithography ', Nano Letters . https://doi.org/10.1021/acs.nanolett.9b01911
Field-emission devices are promising candidates to replace silicon fin field-effect transistors as next-generation nanoelectronic components. For these devices to be adopted, nanoscale field emitters with nanoscale gaps between them need to be fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50f008c97f1d4ff941dee0b4218d4f12
https://doi.org/10.1021/acs.nanolett.9b01911
https://doi.org/10.1021/acs.nanolett.9b01911