Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Alex Neumüller"'
Autor:
Oleg Sergeev, S. J. Heise, Segei Bereznev, Martin Vehse, José Fabio López Salas, Carsten Agert, Alex Neumüller, Olga Volobujeva
Publikováno v:
Nano Energy. 43:228-235
In numerous silicon semiconductor devices, an important task is to suppress charge carrier recombination at surface dangling bonds. In solar cell business, silicon heterojunction with intrinsic thin film (SHJ) solar cells is one of the major research
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69dbc0f173cb994237fda577548451ce
https://doi.org/10.1016/j.nanoen.2017.11.053
https://doi.org/10.1016/j.nanoen.2017.11.053
Publikováno v:
Energy Procedia. 124:371-378
In silicon heterojunction solar cells with thin intrinsic layers (SHJ) based on n-type silicon wafers, it is common to use a p-doped front emitter and back surface field (n-layer). In this study, SHJ cells were developed and investigated in front sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1589c4f6286c21fbc3de5ecf2f2cd35d
https://doi.org/10.1016/j.egypro.2017.09.092
https://doi.org/10.1016/j.egypro.2017.09.092
Autor:
Jelena Maricheva, Sergei Bereznev, J. Kois, D. Dosenovicova, Andres Öpik, Albert G. Nasibulin, Oleg Sergeev, Alex Neumüller, Olga Volobujeva
Publikováno v:
Materials Science in Semiconductor Processing. 68:1-5
In this study a number of hybrid (polypyrrole (PPy)/i-a-Si:H/n-a-Si:H/AZO/glass) solar cells have been prepared and characterized. Hydrogenated amorphous silicon n-doped (n-a-Si:H) and intrinsic (i-a-Si:H) layers acted as a charge separation and phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce2f7a9f29240c4b8f47504ebc53b354
https://doi.org/10.1016/j.mssp.2017.05.028
https://doi.org/10.1016/j.mssp.2017.05.028
Publikováno v:
Applied Surface Science. 403:200-205
The interfaces in silicon thin film solar cells and silicon heterojunction solar cells are considered to be very important for the solar cell conversion efficiency. This work studies the interface properties of hydrogenated amorphous silicon thin fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a99e9cf775a2077104e6bcfb5e4d1e
https://doi.org/10.1016/j.apsusc.2017.01.188
https://doi.org/10.1016/j.apsusc.2017.01.188
Publikováno v:
Energy Procedia. 92:284-290
This study reports successful application of ZnO nanorod arrays for efficient reduction of reflection losses in heterojunction solar cells on flat non-textured silicon wafers. In addition, aluminium doped zinc oxide (AZO) is proposed as a cheap, abun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::121256ccdf094555adeb08281862d26c
Publikováno v:
Solar Energy Materials and Solar Cells. 145:148-153
By taking advantage of spectrally broad resonances, nanocavity-enhanced a-Ge:H solar cells with an absorber layer thickness below 20 nm can reach current densities similar to micron-thick µc-Si:H devices. However, as nanocavity-enhanced devices are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89839d57cf0d5d74da10455270369d79
https://doi.org/10.1016/j.solmat.2015.07.032
https://doi.org/10.1016/j.solmat.2015.07.032
Publikováno v:
Energy Procedia. 84:242-250
In thin-film silicon solar cells the p-doped layer and the i-/p-interface are most critical for the parasitic absorption and the electrical behavior of the solar cell. In this work, we present recent investigations of argon plasma treatment (APT) at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7d9263ff73ffa9dee232d203c089228
https://doi.org/10.1016/j.egypro.2015.12.320
https://doi.org/10.1016/j.egypro.2015.12.320
Autor:
Albert G. Nasibulin, Alena K Aleekseeva, Timur Yagafarov, Jelena Maricheva, Alex Neumüller, Sergei Bereznev, Anton S. Anisimov, Oleg Sergeev, Pramod M. Rajanna, Evgenia P. Gilshteyn
Publikováno v:
Nanotechnology. 29(10)
We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03815dbf3c354527a2577407c55c5929
https://pubmed.ncbi.nlm.nih.gov/29384726
https://pubmed.ncbi.nlm.nih.gov/29384726
Autor:
Oleg Sergeev, Alex Neumüller, Karsten von Maydell, Carsten Agert, Cordula Walder, M. Kellermann
Publikováno v:
Energy Procedia. 44:203-208
Silicon oxide is a promising material for silicon thin-film solar cells. As a doped layer it shows low parasitic absorption while as an intrinsic layer it can be used as a high band gap absorber in multijunction solar cells. Whereas doped silicon oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e44aa2a375229118df428efe599f0076
https://doi.org/10.1016/j.egypro.2013.12.028
https://doi.org/10.1016/j.egypro.2013.12.028
Autor:
Oleg Sergeev, Jens Falta, Martin Vehse, Sergei Bereznev, Moritz Ewert, Alex Neumüller, Olga Volobujeva, Carsten Agert
Publikováno v:
Applied Physics Letters. 109:043903
In silicon thin-film solar cells the interface between the i- and p-layer is the most critical. In the case of back diffusion of photogenerated minority carriers to the i/p-interface, recombination occurs mainly on the defect states at the interface.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32aae1c758580550ef643e3a35eb621
https://doi.org/10.1063/1.4959995
https://doi.org/10.1063/1.4959995