Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Alex Mutale"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:9044-9051
In this study, we investigated the effects of applied voltage and frequencies on the electrical properties of Al/(Er2O3(150 nm)/SiO2(20 nm)/n-Si)/Al MOS capacitor. The e-beam deposited Er2O3/SiO2 films were annealed at 650 °C in N2 ambient and the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf825d68a39e43076afd1287e442caee
https://doi.org/10.1007/s10854-020-03438-z
https://doi.org/10.1007/s10854-020-03438-z
Publikováno v:
RAP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a30239c8117c482917f6b8ae9d43721
https://doi.org/10.37392/rapproc.2022.11
https://doi.org/10.37392/rapproc.2022.11
Publikováno v:
RAP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f1b1d23866a13f661ff070ce2a969b3
https://doi.org/10.37392/rapproc.2022.10
https://doi.org/10.37392/rapproc.2022.10
Publikováno v:
Radiation Physics and Chemistry. 196:110138
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89c3ea532de04231acfb5480402baf7c
https://doi.org/10.1016/j.radphyschem.2022.110138
https://doi.org/10.1016/j.radphyschem.2022.110138
Autor:
Alex Mutale, Ercan Yilmaz
Publikováno v:
RAP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c462a2e23b847b0e20183cda70ef729
https://doi.org/10.37392/rapproc.2021.19
https://doi.org/10.37392/rapproc.2021.19
Autor:
Ercan Yilmaz, Alex Mutale
Publikováno v:
RAP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f32f34f59a273360c9d6d098ee2e9e
https://doi.org/10.37392/rapproc.2020.05
https://doi.org/10.37392/rapproc.2020.05
Publikováno v:
RAP 2019 Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52580ca58ac61d7b8c1f09b4e9c12ccb
https://doi.org/10.37392/rapproc.2019.31
https://doi.org/10.37392/rapproc.2019.31
Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors
Publikováno v:
Journal of Alloys and Compounds. 863:158718
In this work, Er2O3 films deposited by electron beam (E-beam) evaporation technique were annealed at 450 °C, 550 °C, and 650 °C in N2 atmosphere for 30 min. We then compared the electrical properties, the frequency dependency of the density of int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a60df14fa95488e638d2ec22a6d0a691
https://doi.org/10.1016/j.jallcom.2021.158718
https://doi.org/10.1016/j.jallcom.2021.158718