Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Alex Lostetter"'
Publikováno v:
Materials Science Forum. 924:866-870
This paper discusses Wolfspeed’s advances in silicon carbide (SiC) power module packaging, focusing on recent developments in advanced power module heat transfer techniques, the integration of pinfin mechanical structures, and the implementation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2a17a138e8c12a978908d3f85d23a3c
https://doi.org/10.4028/www.scientific.net/msf.924.866
https://doi.org/10.4028/www.scientific.net/msf.924.866
Autor:
Brandon Passmore, Matthew Feurtado, Alex Lostetter, David Simco, Ty McNutt, Kraig Olejniczak, Ajith Wijenayake, Stephen Minden, Daniel Martin
Publikováno v:
2017 IEEE Energy Conversion Congress and Exposition (ECCE).
Silicon carbide (SiC) power semiconductor technology has successfully penetrated several silicon (Si) application markets and is gaining momentum due to higher voltage withstand capability, higher switching capabilities (i.e., 100s of kHz), and abili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eedf91fe5a75c1db37269c0e5b631d6a
https://doi.org/10.1109/ecce.2017.8095886
https://doi.org/10.1109/ecce.2017.8095886
Autor:
Kraig Olejniczak, Ajith Wijenayake, H. Alan Mantooth, Ty McNutt, Alex Lostetter, Brandon Passmore, Jonathan Hayes, Yusi Liu
Publikováno v:
2017 IEEE Electric Ship Technologies Symposium (ESTS).
The Navy's Next Generation Integrated Power System (NGIPS) Technology Development Roadmap establishes Medium Voltage DC (MVDC) Integrated Power System (IPS) technology in future warships. This requires a higher medium voltage (MV)-rated power device,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::191009fd371611a30f069b00dd168352
https://doi.org/10.1109/ests.2017.8069343
https://doi.org/10.1109/ests.2017.8069343
Autor:
Robert Shaw, B. McPherson, Ty McNutt, Alex Lostetter, Brandon Passmore, Kraig Olejniczak, John R. Fraley
Publikováno v:
Journal of Electronic Materials. 43:4552-4559
APEI has developed high-performance electronics to exploit the unique capabilities of wide-bandgap devices. Crucial enabling features include high current density, fast switching speed, high-voltage (>10 kV) blocking, high-temperature operation (>200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9381bddb09513b80904e6376b982d00
https://doi.org/10.1007/s11664-014-3376-y
https://doi.org/10.1007/s11664-014-3376-y
Autor:
Alex Lostetter, Ty McNutt, Paul Shepherd, Ranjan Lamichhane, Michael D. Glover, S.S. Frank, Zach Cole, A. Matthew Francis, C.L. Britton, Brandon Passmore, Sei-Hyung Ryu, Bret Whitaker, Alan Mantooth, Laura D. Marlino, Adam Barkley, Dave Grider, Nance Ericson, Javier Valle-Mayorga, Mihir Mudholkar
Publikováno v:
IEEE Transactions on Power Electronics. 29:539-542
A gate buffer fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a38f6745252bd6498e893adc7e8c253
https://doi.org/10.1109/tpel.2013.2271906
https://doi.org/10.1109/tpel.2013.2271906
Autor:
Yuki Nakano, Ty McNutt, Robert Shaw, Brice McPherson, Alex Lostetter, Bradley A. Reese, Takashi Nakamura, Jared Hornberger, Roberto Schupbach, Takukazu Otsuka
Publikováno v:
SAE International Journal of Passenger Cars - Electronic and Electrical Systems. 6:10-17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7ba8bf90be42c9626c53ab0557d724
https://doi.org/10.4271/2012-01-2209
https://doi.org/10.4271/2012-01-2209
Autor:
Laura D. Marlino, Zach Cole, Bret Whitaker, A. Matthew Francis, Paul Shepherd, Charles L. Britton, S.S. Frank, M. Nance Ericson, Ranjan Lamichhane, Ty McNutt, Alex Lostetter, Alan Mantooth, Michael D. Glover, Daniel Martin, Brandon Passmore
Publikováno v:
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.
This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60459be4df72c116600b2f1023057c38
https://doi.org/10.1109/wipda.2014.6964620
https://doi.org/10.1109/wipda.2014.6964620
Autor:
Kraig Olejniczak, Alex Lostetter, Robert Shaw, Brandon Passmore, Zach Cole, Brice McPherson, Adam Barkley, Bradley A. Reese, Daniel Martin, Ty McNutt, Bret Whitaker
Publikováno v:
2013 4th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG).
APEI, Inc. manufactures high performance, high temperature wide bandgap discrete packages, multi-chip power modules (MCPMs), and integrated systems for extreme environment applications. In this paper, APEI, Inc. presents two MCPMs, the HT-2000 and X-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e8d23b72324da58fa140916aeed3274
https://doi.org/10.1109/pedg.2013.6785623
https://doi.org/10.1109/pedg.2013.6785623
Publikováno v:
2013 IEEE Aerospace Conference.
This paper presents the development of a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) based Anode Supply Module (ASM) Array for the High Voltage Hall Accelerator (HiVHAC) thruster's power processing unit (PPU). The power converter utilizes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21f42a7736e07d4e1e673f6052702269
https://doi.org/10.1109/aero.2013.6496863
https://doi.org/10.1109/aero.2013.6496863
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70c61a1127b89086045076bbc1c5c603
https://doi.org/10.4271/2010-01-1798
https://doi.org/10.4271/2010-01-1798