Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Alex Lidow"'
Autor:
Shengke Zhang, Siddhesh Gajare, Ricardo Garcia, Sijun Huang, Angel Espinoza, Andrea Gorgerino, Ruizhe Zhang, Alejandro Pozo, Robert Strittmatter, Alex Lidow
Publikováno v:
Power Electronic Devices and Components, Vol 6, Iss , Pp 100051- (2023)
DC-DC converters exist in virtually every application of modern power electronics. Due to small die size, low on-resistance, and low parasitic capacitance, GaN power devices offer superior conversion efficiency and record-setting power density. In th
Externí odkaz:
https://doaj.org/article/5ea694be56e6416794691011fe9a064d
Autor:
Alex Lidow, John Glaser
Publikováno v:
2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf37ff2cdb43f4d278ffd327565d248e
https://doi.org/10.23919/ipec-himeji2022-ecce53331.2022.9806849
https://doi.org/10.23919/ipec-himeji2022-ecce53331.2022.9806849
Publikováno v:
IEEE Power Electronics Magazine. 7:28-35
Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles. The goal of qualification testing is to hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b06717e166ad209cddb6cbbc95bf279
https://doi.org/10.1109/mpel.2020.3033651
https://doi.org/10.1109/mpel.2020.3033651
Autor:
Alex Lidow
Publikováno v:
IEEE Power Electronics Magazine. 7:56-63
An integrated circuit (IC) made using gallium nitride on silicon (GaN-on-Si) substrates has been in production for more than five years. The September 2018 issue of IEEE Power Electronics Magazine included an update on the GaN integration of power de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fbff311caf3d9c7cdb03f2e0d737c5b
https://doi.org/10.1109/mpel.2019.2959469
https://doi.org/10.1109/mpel.2019.2959469
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e55a950ad42f1b5eb36c802fc60002
https://doi.org/10.1109/wipda49284.2021.9645095
https://doi.org/10.1109/wipda49284.2021.9645095
Autor:
Alex Lidow
Publikováno v:
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
GaN power devices, discrete transistors and integrated circuits, have been in production for over 10 years and have made significant inroads in many applications that benefit from the smaller size and the faster switching speed. These devices are sev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88664946f9c5e3f1a2d6418af9fb0002
https://doi.org/10.1109/wipdaasia49671.2020.9360274
https://doi.org/10.1109/wipdaasia49671.2020.9360274
Publikováno v:
ECS Meeting Abstracts. :1002-1002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59eac1f6f63c89914d3f8fd83c375a07
https://doi.org/10.1149/ma2021-02341002mtgabs
https://doi.org/10.1149/ma2021-02341002mtgabs
Autor:
Yifeng Wu, Kevin J. Chen, Alex Lidow, Oliver Häberlen, Yasuhiro Uemoto, Chun lin Tsai, Tetsuzo Ueda
Publikováno v:
IEEE Transactions on Electron Devices. 64:779-795
In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa0c0a4bb9a8ca21f089adc059b46546
https://doi.org/10.1109/ted.2017.2657579
https://doi.org/10.1109/ted.2017.2657579
Autor:
Alex Lidow
Publikováno v:
New Electronics. 53:24-25
How are eGaN FETs being used to make cost effective lidar systems that can see farther, with higher resolution?
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0641f065e14fa6c13edfe177bd1f4e2b
https://doi.org/10.12968/s0047-9624(22)61244-6
https://doi.org/10.12968/s0047-9624(22)61244-6
Autor:
Alex Lidow
Publikováno v:
IEEE Power Electronics Magazine. 5:70-72
Discusses the challenges that existed in the late 1970s when power engineers working in the field of power metal–oxide–semiconductor field-effect transistors (MOSFETs) were given the challenge of integrating several power devices to form a monoli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1280e6cd18f40a4c0752fa65b3e1cbf0
https://doi.org/10.1109/mpel.2018.2850738
https://doi.org/10.1109/mpel.2018.2850738