Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Alex Lahav"'
Autor:
Zvi Preigerzon, Alex Lahav
Zvi Preigerzon wrote memoirs about his time in the Gulag in 1958, long before Solzhenitsyn and without any knowledge of the other publications on this subject. It was one of the first eyewitness accounts of the harsh reality of Soviet Gulags. Even af
Autor:
Zvi Preigerzon, Alex Lahav
When the Menorah Fades is a fictionalized account of the town of Hadiach, Ukraine, a small Jewish community destroyed by Nazi occupation during World War II. Based on interviews with the surviving residents of Hadiach, Zvi Preigerzon imagines the ev
Autor:
Petr Siyushev, Alex Lahav, Jörg Wrachtrup, Joseph Salzman, Igal Bayn, Oliver Benson, Barbara A. Fairchild, Michael Barth, Boris Meyler, Thomas Wolf, Steven Prawer, Rafi Kalish, Fedor Jelezko
Publikováno v:
Diamond and Related Materials. 20:937-943
The realization of photonic crystals (PC) in diamond is of major importance for the entire field of spintronics based on fluorescent centers in diamond. The processing steps for the case of diamond differ from those commonly used, due to the extreme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c4cb45ac90289a838186d34a31ad8c3
https://doi.org/10.1016/j.diamond.2011.05.002
https://doi.org/10.1016/j.diamond.2011.05.002
Autor:
Menachem Genut, Alex Lahav
Publikováno v:
Materials Science and Engineering: B. 7:231-235
Non-alloyed tungsten and WSi ohmic contacts to N x Ga 1−x As/GaAs/Al x Ga 1−x As graded-gap heterostructures were investigated. The contacts showed a low specific contact resistance, below 1×10−5Ω cm2, and an excellent surface morphology foll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee4d6052484ca2b94d6791123f9c993f
https://doi.org/10.1016/0921-5107(90)90033-8
https://doi.org/10.1016/0921-5107(90)90033-8
Publikováno v:
Journal of Applied Physics. 67:734-738
Thermal expansion coefficients and biaxial elastic moduli of the sputtered W, WNx, WSi0.45, and WSi0.67N0.10 thin films, used as refractory gate in the self‐aligned metal‐semiconductor field effect transistors on GaAs, were determined by insitu s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0227f4f71e9dbb920334c94d5b159049
https://doi.org/10.1063/1.345779
https://doi.org/10.1063/1.345779
Publikováno v:
2007 Conference on Lasers and Electro-Optics (CLEO).
We demonstrate a more than 10 aspect-ratio FIB semiconductor nanopatterning technique. The undesired semiconductor material decomposition by the beam-tail ions is prevented by a protective Ti layer acting as a mask for the semiconductor.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09ac42095388d4d8fb6d1672755f5493
https://doi.org/10.1109/cleo.2007.4452886
https://doi.org/10.1109/cleo.2007.4452886
Publikováno v:
Applied Physics Letters. 54:1693-1695
Nonalloyed tungsten ohmic contacts to the Inx Ga1−x As/GaAs/Aly Ga1−y As (x=0.4, y=0.25) graded‐gap heterostructure showed excellent surface morphology after annealing of up to 1000 °C for 10 s. The minimum value for the specific contact resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6299afe771791fdbd27ad508a1aaa54
https://doi.org/10.1063/1.101305
https://doi.org/10.1063/1.101305
Autor:
Alex Lahav
Publikováno v:
MRS Proceedings. 144
Crystallization temperature (Tc) of amorphous WSix films on GaAs was studied as a function of the Si/W ratio. The highest Tc of 875°C for a 20 min anneal was obtained for co-sputtered WSMi films with the Si/W ratio of 0.45 (31 at.% Si). The WSi0.45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::792a5d1a93a348848e3a6b5e7dcb117d
https://doi.org/10.1557/proc-144-601
https://doi.org/10.1557/proc-144-601