Zobrazeno 1 - 10
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pro vyhledávání: '"Alex L. Flamholz"'
Autor:
Alex L. Flamholz, Inna V. Babich, Juan R. Maldonado, Vincent Dimilia, Robert P. Rippstein, L. C. Hsia
Publikováno v:
Microelectronic Engineering. 21:113-116
This paper describes techniques to determine the effective wavelength of x-ray lithography sources. The experimental results give information on the actual x-ray absorption of the resist materials for the x-ray source under test. Results for two beam
Autor:
Robert P. Rippstein, Cameron J. Brooks, Michael J. Lercel, Shalom J. Wind, Azalia A. Krasnoperova, Alex L. Flamholz, E. Kratschmer
Publikováno v:
SPIE Proceedings.
This paper discusses the resolution capabilities of proximity x-ray lithography (PXRL) system. Exposure characteristics of features designed at 150 nm pitch size: 75 nm dense lines with 1:1 duty ratio, 2D features at 1:1 and 1:2 duty ratios and isola
Autor:
G. P. Murphy, Alex L. Flamholz, Paul D. Agnello, Sang Lee, Daniel J. DeMay, Kenneth J. Giewont, Alvin G. Thomas, Steve Loh, Jeffrey A. Leavey, Sue Chaloux, Alek C. Chen, Azalia A. Krasnoperova, Chet Wasik
Publikováno v:
SPIE Proceedings.
X-ray lithography has been used in mix and match mode with optical steppers to build test circuits in support of DRAM and Logic development at IBM's Advanced Semiconductor Technology Center, ASTC. Prior to building the test devices, hundreds of wafer
Autor:
R. J. Amodeo, Ben R. Vampatella, George A. Gomba, Alex L. Flamholz, Carl Stahlhammer, D. A. Heald, Azalia A. Krasnoperova, P. C. Kochersperger, Robert H. Fair, J. P. Silverman, William Chu, Alek C. Chen, Vincent Dimilia, Robert P. Rippstein
Publikováno v:
SPIE Proceedings.
A state-of-the-art proximity x-ray lithography aligner was developed for the Defense Advanced Lithography Program (DALP) and installed in IBM's Advanced Lithography Facility (ALF) in 1995. This aligner was designed to satisfy the manufacturing requir
Autor:
S. E. Liang, R. C. Yandow, John F. Conway, Alex L. Flamholz, D. Patel, C. N. Alcorn, Jim Ricker
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
As part of the Defense Advanced Lithography Program (DALP), IBM has fabricated 0.35 micrometers high-density static random access memory (SRAM) chips with all critical levels being exposed using synchrotron X-ray lithography. X-ray exposures for the
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
X-ray lithography can be used to achieve deep sub-micron design groundrules. With X-ray, as with other lithographic systems, mix and match techniques are often used to achieve timely, cost effective implementation. This can, in some cases, reduce ove
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2476
The 180 nm ground rule production prototype x-ray lithography aligner was developed for the Defense Advanced Lithography Program (DALP) and installed in IBM’s Advanced Lithography Facility (ALF) in 1995. This aligner is designed to satisfy the manu
Autor:
Tom Donohue, Alex L. Flamholz, Carl Stahlhammer, Srinivas B. Bollepalli, Franco Cerrina, R. Viswanathan, Mumit Khan, Dan Galburt, Shalom J. Wind, Victor Pol, James Buchigniano, Juan R. Maldonado, Ralph Amodeo, Scott Daniel Hector, D. A. Heald, Azalia A. Krasnoperova
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2517
Complex patterns with 75–125 nm feature sizes exposed with x-ray lithography are shown. Lithographic results for 75–125 nm lines with varying pitch are compared to simulations of image formation and resist dissolution, showing good qualitative ag
Autor:
Robert P. Rippstein, Alex L. Flamholz
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:2002
An integrated x‐ray align and expose system has been installed at Brookhaven National Laboratory National Synchrotron Light Source VUV beam line U2. The system includes the first commercially available x‐ray align and expose system, the Karl Suss
Autor:
Alex L. Flamholz
Publikováno v:
SPIE Proceedings.
Pellicles are thin transparent membranes of high optical quality that are placed on one or both sides of an IC circuit mask to protect the mask and to prevent any particulate defect falling onto the mask from affecting the printed image [1]. Pellicle