Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Alex Kaloyeros"'
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 12, Pp n/a-n/a (2021)
Anisotropic layered GaTe has emerged as a potential material for polarization‐sensitive applications. The optical anisotropy in monoclinic GaTe is triggered by its in‐plane structural anisotropy, as each layer comprises periodic chain‐like stru
Externí odkaz:
https://doaj.org/article/8bf424a0d7364afe89e212524910c1e7
Autor:
Edward Crawford, Vidya Kaushik, Spyros Gallis, Vasileios Nikas, Alex Kaloyeros, Mengbing Huang, Natasha Tabassum
Publikováno v:
Nanophotonics, Vol 9, Iss 6, Pp 1425-1437 (2020)
High-precision placement of rare-earth ions in scalable silicon-based nanostructured materials exhibiting high photoluminescence (PL) emission, photostable and polarized emission, and near-radiative-limited excited state lifetimes can serve as critic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5228fe4da9a75ff9cbdb187f26780f5d
https://doi.org/10.1515/nanoph-2019-0535
https://doi.org/10.1515/nanoph-2019-0535
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 12, Pp n/a-n/a (2021)
Anisotropic layered GaTe has emerged as a potential material for polarization‐sensitive applications. The optical anisotropy in monoclinic GaTe is triggered by its in‐plane structural anisotropy, as each layer comprises periodic chain‐like stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9446f374d382d8ceba9392bb68cb8cc0
https://doaj.org/article/8bf424a0d7364afe89e212524910c1e7
https://doaj.org/article/8bf424a0d7364afe89e212524910c1e7
Autor:
J. Ryan, Barry C. Arkles, Yongqiang Xue, J.E. Raynolds, Robert E. Geer, Eric Eisenbraun, A. Gadre, Alex Kaloyeros, Mircea R. Stan
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 54:2345-2352
Theoretical treatments forecast that bistable CMOS devices using electronic charge as a state variable will operate at their maximum thermal dissipation limit possibly as early as 2012. The problem is further compounded by increasing manufacturing ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8b2495fda99d099e10bd36fa8957a2
https://doi.org/10.1109/tcsi.2007.907827
https://doi.org/10.1109/tcsi.2007.907827
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
The barrier performance of a metal-organic atomic layer deposition (ALD) tantalum nitride process has been investigated for potential application as copper diffusion barrier in future device generations. This process, which is carried out at 250/spl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b89550a47c64c315634ae92cd6aa9d69
https://doi.org/10.1109/iitc.2002.1014929
https://doi.org/10.1109/iitc.2002.1014929
Autor:
V. V. Afanas'ev, A. Stesmans, Mengbing Huang, Vasileios Nikas, A. P. D. Nguyen, Alex Kaloyeros, Spyros Gallis
Publikováno v:
Applied Physics Letters. 104:061906
Silicon oxycarbide (SiCxOy) is a promising material for achieving strong room-temperature white luminescence. The present work investigated the mechanisms for light emission in the visible/ultraviolet range (1.5–4.0 eV) from chemical vapor deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19d7b03d6ea84a3e6fa418bcf57b9a8c
https://doi.org/10.1063/1.4865100
https://doi.org/10.1063/1.4865100
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced 'zero thickness' copper barrier applications. This process, which is carried out at substrate temperatures below 450/spl deg/C on commercial ALD reactor, employs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92520e63728993bc3fc5b91ced7f077d
https://doi.org/10.1109/iitc.2001.930062
https://doi.org/10.1109/iitc.2001.930062