Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Alex Joseph Varghese"'
Autor:
Felix Levitov, Paz Yabbo, Brad Austin, Omri Baum, Nathaniel Mowell, Jennifer Church, DukKyun Moon, Uri Smolyan, Alex Joseph Varghese, Teresa A. Esposito, Luciana Meli
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A characterization approach has been developed for evaluating stochastic printing failures in EUV contact holes. Demand for consistent yield exceeding 10 billion contacts requires robust process co-optimization with a focus on stochastic defect reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94cd6620cec7a30ee0b9b7e357112241
https://doi.org/10.1109/asmc51741.2021.9435687
https://doi.org/10.1109/asmc51741.2021.9435687
Autor:
Vidyasagar Anantha, Shravan Matham, Raghav Babulnath, Satya Kurada, Alexa Greer, Brad Austin, Alex Joseph Varghese, Graham Jensen
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Development of advanced logic design nodes requires accelerated identification of yield limiting defect types. Missing vias in back end of line (BEOL) is a key defect of interest driving the need for a reliable process control method to monitor the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48d96004af59ce0a5241977219324792
https://doi.org/10.1109/asmc51741.2021.9435675
https://doi.org/10.1109/asmc51741.2021.9435675
Autor:
Balasubramanian S. Haran, Kisup Chung, Spyridon Skordas, Stan D. Tsai, Mark L. Lenhardt, Su Chen Fan, Sean Teehan, Alex Joseph Varghese, Ruilong Xie, Pietro Montanini
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Self-aligned contact (SAC) is required for 7 nm node to reduce susceptibility of contact-to-gate short failures. This requires forming a SAC cap on metal-recessed gate. The SAC cap formation is usually achieved by removing nitride on the field by pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fbd27d6ee98fb8fd9dfb24709c5f9b4
https://doi.org/10.1109/asmc.2018.8373209
https://doi.org/10.1109/asmc.2018.8373209