Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Alex Hernandez-Luna"'
Autor:
Enis Tuncer, Alex Hernandez-Luna
Publikováno v:
Cogent Engineering, Vol 5, Iss 1 (2018)
We have performed thermo-mechanical and electrical tests on epoxy resin samples used for semiconductor packaging applications. The reported resins are commonly used in Texas Instrument Incorporated products. The study was performed to better understa
Externí odkaz:
https://doaj.org/article/f845e4d79c1c4531812e16abfedfcaef
Autor:
Alex Hernandez-Luna, Enis Tuncer
Publikováno v:
Cogent Engineering, Vol 5, Iss 1 (2018)
We have performed thermo-mechanical and electrical tests on epoxy resin samples used for semiconductor packaging applications. The reported resins are commonly used in Texas Instrument Incorporated products. The study was performed to better understa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::679cdb6c7d2012e2daa7b889e2a1d00f
https://doaj.org/article/f845e4d79c1c4531812e16abfedfcaef
https://doaj.org/article/f845e4d79c1c4531812e16abfedfcaef
Autor:
Giorgio Baccarani, James R. Huckabee, Antonio Gnudi, L. Nguyen, F. Monti, Alex Hernandez-Luna, Marie Denison, N. Tipirneni, Susanna Reggiani, Ilaria Imperiale, Elena Gnani
The electron and hole impact-ionization coefficients in AlxGa1-xN have been calibrated through a Chynoweth law by using a Monte Carlo theoretical study and experimental data at different ambient temperatures. The model has been used to investigate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbffc3e740fadd62c04178e88c78ddd8
http://hdl.handle.net/11585/521330
http://hdl.handle.net/11585/521330
Autor:
Giorgio Baccarani, Ilaria Imperiale, Susanna Reggiani, Elena Gnani, Alex Hernandez-Luna, James R. Huckabee, Marie Denison, Antonio Gnudi, Luu Nguyen, Dhanoop Varghese
Four molding-compound composites with different silica micro-filler size and concentration have been measured on top of dedicated IC test structures. The leakage current of charge sensors has been monitored under different high-voltage stress during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f779a9c8044bf59c95d5c6c21afc32c
http://hdl.handle.net/11585/521269
http://hdl.handle.net/11585/521269
Autor:
James R. Huckabee, Giorgio Baccarani, Alex Hernandez-Luna, Susanna Reggiani, Marie Denison, Ilaria Imperiale, Elena Gnani, G. Arienti, Antonio Gnudi, L. Nguyen
The sensitivity of HV RESURF LDMOS transistors to parasitic charging in molding compound is investigated in this work by incorporating the passivation and encapsulation layers in the TCAD setup and implementing the conductivity losses in the mold. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f2a68074bc5f98b6795e3e773a15912
http://hdl.handle.net/11585/521336
http://hdl.handle.net/11585/521336