Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Alex C. Tseng"'
Publikováno v:
Science and Technology of Advanced Materials, Vol 20, Iss 1, Pp 917-926 (2019)
In this study, we develop a Na+-sensitive thin-film transistor (TFT) for a biocompatible ion sensor and investigate its cytotoxicity. A transparent amorphous oxide semiconductor composed of amorphous In–Ga–Zn–oxide (a-InGaZnO) is utilized as a
Externí odkaz:
https://doaj.org/article/8cb3ceae8a034d918250199f4ea1a79e
Publikováno v:
Sensors, Vol 17, Iss 7, p 1640 (2017)
Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of
Externí odkaz:
https://doaj.org/article/64506d5f2b9941bd8a3526ff40b05917
Autor:
Alex C. Tseng, Toshiya Sakata
Publikováno v:
ACS Applied Materials & Interfaces. 14:24729-24740
In composite hydrogels, the high electrical performance of poly(3,4-ethylenedioxythiophene) complexed with poly(styrenesulfonate) (PEDOT:PSS) is integrated with complementary structural and electrochemical functions via a rationally designed poly(acr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea95e76b992bcf1eeb12c057c94c13a7
https://doi.org/10.1021/acsami.2c01779
https://doi.org/10.1021/acsami.2c01779
Autor:
Igor G. Savelyev, Marina Blumin, Harry E. Ruda, Zhiming Wang, Selvakumar V. Nair, David Lynall, Shiliang Wang, Alex C. Tseng
Publikováno v:
ACS nano. 14(1)
Much recent attention has been focused on the development of field-effect transistors based on low-dimensional nanostructures for the detection and manipulation of molecules. Because of their extraordinarily high charge sensitivity, InAs nanowires pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7e40b25b92716ccc4f5fd63bf41cfb3
https://pubmed.ncbi.nlm.nih.gov/31904218
https://pubmed.ncbi.nlm.nih.gov/31904218
Autor:
Marina Blumin, Shiliang Wang, Igor G. Savelyev, Alex C. Tseng, David Lynall, Harry E. Ruda, Toshiya Sakata, Kensuke Ito
Publikováno v:
Sensors and Actuators B: Chemical. 336:129704
Trapping of environmental charges in surface states typically dominates electrical transport in nanostructured field-effect transistors (FETs) applied as sensors. Such surface effects produce exceptional sensitivity, yet time dependencies on experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22dc481714273981d783acb0487dae7c
https://doi.org/10.1016/j.snb.2021.129704
https://doi.org/10.1016/j.snb.2021.129704
Publikováno v:
Sensors, Vol 17, Iss 7, p 1640 (2017)
Sensors (Basel, Switzerland)
Sensors; Volume 17; Issue 7; Pages: 1640
Sensors (Basel, Switzerland)
Sensors; Volume 17; Issue 7; Pages: 1640
Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::771d02e11792167f023987ecf99c1ebe
https://www.mdpi.com/1424-8220/17/7/1640
https://www.mdpi.com/1424-8220/17/7/1640
Publikováno v:
Smart Materials and Structures. 24:085034
Thermoelectric effect is defined as the revisable translation between thermal and electrical energy. In this paper, we investigate the properties of p-type poly(vinylidene fluoride) (PVDF) based polymer composite foams that can be used in next genera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16260d4a857e95c820d6093548b65327
https://doi.org/10.1088/0964-1726/24/8/085034
https://doi.org/10.1088/0964-1726/24/8/085034