Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Alex A. Wernberg"'
Publikováno v:
Journal of Crystal Growth. 140:57-64
Single crystal LiNbO 3 has been deposited on a z -cut LiTaO 3 substrate by a spray metalorganic chemical vapor deposition (MOCVD) process using the single source precursor LiNb(OEt) 6 . The surface morphology of the film has been characterized by sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680dd1c6eb3b9385c238ffc708ba30b4
https://doi.org/10.1016/0022-0248(94)90496-0
https://doi.org/10.1016/0022-0248(94)90496-0
Publikováno v:
Journal of Crystal Growth. 131:176-180
Epitaxial films of gallium arsenide were grown on (100) GaAs at 520–540°C from the single source organometallic precursor [(n-Bu) 2 Ga(μ-As(t-Bu) 2 )] 2 using a modified spray pyrolysis process. The epitaxial nature of the films was established b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bfe20f046ec4beb0da0039dad655823
https://doi.org/10.1016/0022-0248(93)90411-o
https://doi.org/10.1016/0022-0248(93)90411-o
Autor:
Thomas N. Blanton, Henry J. Gysling, Kirby Dwight, Robert Kershaw, Robert D. Pike, H. Cui, Aaron Wold, Alex A. Wernberg
Publikováno v:
Thin Solid Films. 224:221-226
Thin films of zinc sulfide were prepared by ultrasonically spraying a toluene solution of bis(diethyldithiocarbamato)zinc(II) onto silicon, sapphire and gallium arsenide substrates at 460–520 °C. The films prepared on silicon or sapphire were foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b92eab2bde1ab0c0f0561f6cf9e8c692
https://doi.org/10.1016/0040-6090(93)90436-s
https://doi.org/10.1016/0040-6090(93)90436-s
Publikováno v:
Chemistry of Materials. 4:900-905
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e338bcf776ed728fff6294dd312500b
https://doi.org/10.1021/cm00022a028
https://doi.org/10.1021/cm00022a028
Publikováno v:
Thin Solid Films. 205:236-240
Films of gallium arsenide were deposited under ultra-high vacuum (UHV) conditions onto a silicon (100) substrate at 400 °C using a single organometallic precursor containing both Group III and Group V elements. Characterization of the films by Auger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37e609c995b9d1fcb18cda5ef65e7ed0
https://doi.org/10.1016/0040-6090(91)90307-j
https://doi.org/10.1016/0040-6090(91)90307-j
Autor:
John G. Ekerdt, Thomas N. Blanton, Henry J. Gysling, Kenneth B. Kidd, Alex A. Wernberg, Richard A. Jones, James E. Miller, Alan H. Cowley
Publikováno v:
Chemistry of Materials. 2:589-593
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd537ecc5a3eab3565728f64076d450e
https://doi.org/10.1021/cm00011a023
https://doi.org/10.1021/cm00011a023
Publikováno v:
Applied Physics Letters. 63:2649-2651
Epitaxial lithium tantalate thin films were grown on sapphire substrates by metal‐organic chemical‐vapor deposition using a two‐step growth process. After an initial thin (≊30–100 A thick) amorphous buffer layer of LiTaO3 was deposited and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0adf4451b4a43a924ae21c7e722f9246
https://doi.org/10.1063/1.110409
https://doi.org/10.1063/1.110409
Autor:
Alex A. Wernberg, Henry J. Gysling
Publikováno v:
Chemistry of Materials. 5:1056-1058
In this communication the authors report the fabrication of epitaxial LiNbO[sub 3] thin films of improved crystalline properties and surface morphology using the well-characterized single-source reagent, LiNb(OEt)[sub 6]. The spray MOCVD film fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f1f7d8e29fb9ccc27d92ea18fc22a2
https://doi.org/10.1021/cm00032a002
https://doi.org/10.1021/cm00032a002
Autor:
Thomas N. Blanton, Gustavo R. Paz-Pujalt, Alex A. Wernberg, Henry J. Gysling, Gabriel Braunstein
Publikováno v:
Applied Physics Letters. 63:331-333
We demonstrate the solid‐phase epitaxial crystallization of thin films of lithium tantalate deposited on lithium niobate and sapphire substrates. An organometallic compound, formed by reaction of lithium dipivaloylmethanate and tantalum(V) ethoxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d967a9304a23a9a7660bd5b88bf052
https://doi.org/10.1063/1.110061
https://doi.org/10.1063/1.110061
Publikováno v:
Applied Physics Letters. 62:946-948
Lithium niobate thin films were deposited on (0001) sapphire using metalorganic chemical vapor deposition. An organometallic compound, formed by reaction of lithium dipivaloylmethanate and niobium(V) ethoxide, was used as a single‐source precursor.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c6aa35e31aab59a85caa3574941d0e6
https://doi.org/10.1063/1.108528
https://doi.org/10.1063/1.108528