Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Alevtina Podgaynaya"'
Publikováno v:
IEEE Electron Device Letters. 31:1440-1442
Numerical TCAD and transmission line pulse analysis of an electrical safe operating area of a robust p-channel lateral DMOS transistor is performed. The observed independence of the trigger current on the applied gate-source voltage is attributed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fde457ac701e2d126b14eb58ed5ca047
https://doi.org/10.1109/led.2010.2081337
https://doi.org/10.1109/led.2010.2081337
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
Electrical safe operating area (SOA) of doublediffused vertical MOSFETs (VDMOS) in smart power ICs is investigated by simulation and experiments. The influence of the layout of VDMOS cells is analyzed. DMOS transistors with circular/oval cell layout
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b23f7cfc52d702f36c1671b1278ce105
https://doi.org/10.1109/irps.2009.5173293
https://doi.org/10.1109/irps.2009.5173293