Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Alessandro Veneroni"'
Autor:
Audrey Bonnefond, Edurne González, José M. Asua, Jose Ramon Leiza, Eliana Ieva, Giulio Brinati, Serena Carella, Alessio Marrani, Alessandro Veneroni, John Kiwi, Cesar Pulgarin, Sami Rtimi
Publikováno v:
Crystals, Vol 6, Iss 10, p 136 (2016)
The contamination of air and water is one of the major concerns towards the development of a sustainable world in the 21st century. In this context many efforts are devoted to the design of photocatalytic paints able to degrade chemical and biologica
Externí odkaz:
https://doaj.org/article/760ba640403a41f3a5f3daa2ef8d681f
Autor:
John Kiwi, Jose R. Leiza, Alessandro Veneroni, Alessio Marrani, Cesar Pulgarin, Edurne González, José M. Asua, Giulio Brinati, Sami Rtimi, Eliana Ieva, Serena Carella, Audrey Bonnefond
Publikováno v:
Crystals, Vol 6, Iss 10, p 136 (2016)
Addi. Archivo Digital para la Docencia y la Investigación
instname
Crystals; Volume 6; Issue 10; Pages: 136
Addi. Archivo Digital para la Docencia y la Investigación
instname
Crystals; Volume 6; Issue 10; Pages: 136
The contamination of air and water is one of the major concerns towards the development of a sustainable world in the 21st century. In this context many efforts are devoted to the design of photocatalytic paints able to degrade chemical and biologica
Autor:
Giuseppe Pistone, Danilo Crippa, Giuseppe Abbondanza, Gaetano Foti, Marco Mauceri, Stefano Leone, Maurizio Masi, Alessandro Veneroni, Gian Luca Valente, Giuseppe Condorelli, A. Fiorucci, Francesco La Via
Publikováno v:
Materials Science Forum. :93-96
A simplified deposition model, involving both the description of the deposition and of the film morphology was adopted to quantitatively understand the experimental trends encountered in the epitaxial silicon carbide deposition in an industrial hot w
Autor:
Alessandro Veneroni, Maurizio Masi
Publikováno v:
Chemical Vapor Deposition. 12:562-568
A detailed chemical mechanism for the silicon carbide epitaxial growth using light hydrocarbons, silane, and either chlorosilanes and/or HCl as the chlorine source is presented. The mechanism involves 153 gas-phase and 76 surface reactions among 47 g
Autor:
Maurizio Masi, Giovanni Attolini, Davide Moscatelli, Alessandro Veneroni, C. Pelosi, Matteo Bosi
Publikováno v:
Journal of Crystal Growth. 287:652-655
Feasibility of manufacturing a new metalorganic vapor phase epitaxy (MOVPE) reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates for the production of satellite-use solar cells was investigated. The overall deposition mechanism fo
Autor:
Alessandro Veneroni, Giuseppe Pistone, F. Omarini, Giuseppe Abbondanza, Stefano Leone, Maurizio Masi, Marco Mauceri
Publikováno v:
Crystal Research and Technology. 40:972-975
The model adopted for the simulation of a new industrial size type of horizontal cold wall reactor for epitaxial silicon carbide deposition is reviewed. The attention is focalized on the chemical mechanism adopted and on the comparison with some grow
Publikováno v:
Crystal Research and Technology. 40:967-971
A detailed chemical mechanism for the silicon carbide epitaxial growth using chlorinated precursors is presented here. The mechanism involves 155 gas phase and 66 surface reactions among 47 gas phase and 9 surface species, respectively. A comparison
Publikováno v:
Crystal Research and Technology. 40:958-963
The modeling approach (multiscale) linking the different scales encountered in simulating industrial growth processes from the vapor phase of interest for the silicon based microelectronics is here addressed. The final aim is linking the materials an
Autor:
F. Omarini, Giuseppe Pistone, Giuseppe Abbondanza, Maurizio Masi, Stefano Leone, Marco Mauceri, Alessandro Veneroni
Publikováno v:
Materials Science Forum. :57-60
The present production processes for epitaxial SiC do not allow the matching of productivity with the material quality requested by the microelectronics market. Here, to respond to such a demand, a combined experimental and multi-scale – multi-hier
Publikováno v:
Journal of Crystal Growth. 266:371-380
The gas phase deposition of Si on a Si(1 0 0) surface in the presence of hydrogen was studied with three-dimensional kinetic Monte Carlo (KMC) simulations. The KMC model here proposed explicitly accounts for the 2×1 Si surface reconstruction and inc