Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Alessandro Salvucci"'
Autor:
Nunzio Lanotte, Giuseppe Annino, Stefano Bifaretti, Giorgio Gatta, Cristian Romagnoli, Alessandro Salvucci, Vincenzo Bonaiuto
Publikováno v:
Proceedings, Vol 2, Iss 6, p 285 (2018)
The mechanism of propulsion in swimming has been widely researched in recent years, but not completely clarified. While it is obvious that the movement of arms provides most of the thrust, it is unclear how each phase of the stroke translates into bo
Externí odkaz:
https://doaj.org/article/d1bc353a487b4f4eb29571f33adb356c
Autor:
Manuela Sotgia, Walter Ciccognani, Alessandro Salvucci, Ernesto Limiti, M. Vittori, Rocco Giofre, M. Cirillo, Ferdinando Costanzo, Giorgio Polli, Sergio Colangeli
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:5696-5707
The design, realization, and tests of an S-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) single-chip front end (SCFE) is presented. The MMIC, realized on the 250-nm gate length GaN process available from the united monolit
Autor:
Alessandro Salvucci, Luigi Brusciano, Simona Parisi, Domenico Parmeggiani, Francesco Saverio Lucido, Giuseppe Scognamiglio, Gianmattia del Genio, Mariachiara Lanza Volpe, Francesco Pizza, Claudio Gambardella
Publikováno v:
International Journal of Surgery Case Reports
Highlights • LAGB presents many severe complications. • Wedge resection could allow to preserve a tailored gastric pouch limiting postoperative nutritional defects. • Strict postoperative follow-up reduce the risk of severe complications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d0ad8088b9d12343dcb95194874e4f6
http://hdl.handle.net/11591/451786
http://hdl.handle.net/11591/451786
Autor:
P. Frtjlink, Alessandro Salvucci, Silvio Fenu, M. Renvoise, Walter Ciccognani, Patrick E. Longhi, Sergio Colangeli, Ernesto Limiti, Lorenzo Pace
Publikováno v:
2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring).
In this paper, a times four K- to W-Band frequency multiplier involved in the generation of a Local Oscillator signal is presented. The chosen technology for this design is the D01MH, a metamorphic GaAs mHEMT with a 0.13 µm channel length. The desig
Autor:
Ernesto Limiti, Sergio Colangeli, Walter Ciccognani, Antonio Serino, Patrick E. Longhi, Alessandro Salvucci
Low-noise amplifier (LNA) designers often struggle to simultaneously satisfy gain, noise, stability, and I/O matching requirements. In this article, a novel design technique, tailored for two-stage low-noise amplifiers, is presented. The proposed des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53f0dfdd0d32001cb22aa197d537c6c9
http://hdl.handle.net/2108/216996
http://hdl.handle.net/2108/216996
Autor:
Ernesto Limiti, Giorgio Polli, Rocco Giofre, A. De Padova, A. Del Gaudio, Sergio Colangeli, Walter Ciccognani, Alessandro Salvucci
In this contribution, a Single-Chip Front-End (SCFE) operating in C-band (from 5.25 GHz to 5.57 GHz) is proposed. The chip is designed exploiting a GaN HEMT process available at Leonardo S.p.A. foundry, featured by 250 nm gate length. The SCFE integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0a5cc229114b9c4d3ce816bc5be4cea
http://hdl.handle.net/2108/202771
http://hdl.handle.net/2108/202771
Autor:
Walter Ciccognani, Aurora De Padova, Giorgio Polli, Sergio Colangeli, Alessandro Salvucci, Ferdinando Costanzo, Ernesto Limiti
Publikováno v:
PRIME
In this contribution two different versions of MMIC LNAs integrating the limiting function are presented. The chips are designed with 0.25 μm gate length GaN on SiC technology as provided by Leonardo foundry, and arrange the receiving circuitry of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf30e974b5f22599b5a963c244132eab
http://hdl.handle.net/2108/212407
http://hdl.handle.net/2108/212407
Autor:
Alessandro Salvucci, M. Vittori, Walter Ciccognani, Giorgio Polli, Ernesto Limiti, Ferdinando Costanzo, Sergio Colangeli
Publikováno v:
PRIME
In this paper, two LNAs, designed to operate in Ka and V bands, and realized in a 70 nm GaAs/InGaAs technology, are presented. Both amplifiers have a 2-stage structure featured by source feedback and self-biasing networks to improve noise performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca5d224ebe73958927b7051d2d894823
http://hdl.handle.net/2108/212427
http://hdl.handle.net/2108/212427
Publikováno v:
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC).
In this paper, the design of a power amplifier (PA) Microwave Monolithic Integrated Circuit (MMIC) fabricated using a 100 nm gate length Gallium Nitride HEMT on Silicon substrate (GaN-Si) is reported. The HPA is based on a four stage architecture, de
Publikováno v:
PRIME
the design of a Q-band high power amplifier (HPA) in Microwave Monolithic Integrated Circuit (MMIC) technology is presented. The HPA is fabricated in a 100nm gate length Gallium Nitride on Silicon (GaN-Si) technology. The HPA, based on a four-stage a