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pro vyhledávání: '"Alessandro Pezzotta"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 85-94 (2018)
In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculat
Externí odkaz:
https://doaj.org/article/f3c6f475babb4e04afc9705926295e29
