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pro vyhledávání: '"Alessandro Magnavacca"'
Autor:
Corrado Villa, M. La Placa, Andrea Scavuzzo, Stefan Schippers, Michelangelo Pisasale, N. Del Gatto, Vincenzo Dima, E. Bolandrina, Alessandro Magnavacca, A. Martinelli, F. Mastroianni, M. Gaitiotti, Emanuele Confalonieri, Salvatore Polizzi, Marco Sforzin, Daniele Vimercati, B. Calandrino, Mauro Sali, Carlo Lisi, Antonio Geraci, M. Scardaci
Publikováno v:
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..
A 1.8 V 256 Mb 2b/cell NOR flash memory is designed in a 130 nm technology. A fast gate-voltage-ramp constant-current-reading concept is implemented to obtain a robust read-while-write/erase function and 125 MHz burst read frequency.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11cd716540c31a2b0baaa8edc1511628
https://doi.org/10.1109/isscc.2005.1493864
https://doi.org/10.1109/isscc.2005.1493864
