Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Alessandro Grossi"'
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 1, Pp 64-68 (2017)
In this paper, the set operation of HfO2 based 1T-1R arrays is studied by applying incremental step pulse with verify algorithm. To evaluate the impact of the voltage step increment on the conduction mechanism of filaments, the voltage increments bet
Externí odkaz:
https://doaj.org/article/d6b0e15b50654b23b47630b9e9fb8082
Publikováno v:
Revista do Colégio Brasileiro de Cirurgiões, Vol 35, Iss 6, Pp 442-444
The authors present a method of teaching of suture techniques being used instrumental surgical and bovine tongue used in the evaluation of the graduation students' learning. The evaluation of the technique, used since January 2000, considering studen
Externí odkaz:
https://doaj.org/article/3cee72d1e7bd4ea49ec493dbf3eaa56a
Autor:
Tony F. Wu, Binh Quang Le, Alessandro Grossi, Elisa Vianello, Subhasish Mitra, H.-S. Philip Wong, Giusy Lama, Edith Beigne
Publikováno v:
IEEE Transactions on Electron Devices. 66:641-646
We demonstrate, for the first time, resistive RAM (RRAM) arrays where each cell can store 3 bits. Such full array-level demonstration is possible through special techniques (e.g., that exploit RRAM-specific characteristics of variations in cell resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f0bf6bceb1730923dba09a8e96d1856
https://doi.org/10.1109/ted.2018.2879788
https://doi.org/10.1109/ted.2018.2879788
Autor:
Luca Perniola, Piero Olivo, Etienne Nowak, Elisa Vianello, Alessandro Grossi, Pablo Royer, Jean-Philippe Noel, Cristian Zambelli, Bastien Giraud
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:2599-2607
Resistive random access memories (RRAMs) feature high-speed operations, low-power consumption, and nonvolatile retention, thus serving as a promising candidate for future memory applications. To explore the applications of the RRAM, switching variabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51de9faa3752b8856681f0bccc8f8287
https://doi.org/10.1109/tvlsi.2018.2805470
https://doi.org/10.1109/tvlsi.2018.2805470
Autor:
Vincenzo Alonzo, Alessandro Grossi
Il dibattito intorno al calcio come disciplina sportiva si è sviluppato negli ultimi anni grazie anche ai contributi offerti da uno specifico ambito di ricerca creatosi intorno alla pedagogia dello sport, che ha permesso la crescita esponenziale di
Publikováno v:
Microelectronic Engineering. 178:1-4
The impact of temperature during the forming operation on the electrical cells performance and the post-programming stability were evaluated in amorphous and polycrystalline HfO2-based arrays. Forming (between 40 and 150C), reset and set (at room tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0a1df4f752537ff29488ca9c6ba246c
https://doi.org/10.1016/j.mee.2017.04.003
https://doi.org/10.1016/j.mee.2017.04.003
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOyBased RRAM Arrays by Using Program Algorithms
Autor:
Eduardo Perez, Alessandro Grossi, Christian Wenger, Cristian Zambelli, Robin Roelofs, Piero Olivo
Publikováno v:
IEEE Electron Device Letters. 38:175-178
In this letter, we propose an effective route to reduce the cell-to-cell variability in 1T-1R-based random access memories (RRAM) arrays by combining the excellent switching performance of Hf 1-x Al x O y with an optimized incremental step pulse with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54fd40dd5efc0ef3838a2b5df5af33eb
https://doi.org/10.1109/led.2016.2646758
https://doi.org/10.1109/led.2016.2646758
Autor:
Martin Ziegler, Mamathamba Kalishettyhalli Mahadevaiah, Hermann Kohlstedt, Cristian Zambelli, Finn Zahari, Piero Olivo, Alessandro Grossi, Ch. Wenger, Eduardo Perez
Publikováno v:
IRPS
CMOS integrated 4kbit 1T-1R memristive devices were examined in terms of device-to-device and pulse number dependent variability for the use in neuromorphic systems. Based on the variability of polycrystalline HfO2 based Resistive Random Access Memor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f56360d0647620e7f87c64a06bd7a94
http://hdl.handle.net/11392/2407283
http://hdl.handle.net/11392/2407283
Autor:
Etienne Nowak, Subhasish Mitra, Tony F. Wu, Edith Beigne, Elisa Vianello, Binh Quang Le, Alessandro Grossi, Marios Barlas, Cristian Zambelli, Mary Wootters, Mohamed M. Sabry, Laurent Grenouillet, Jean Coignus
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1281-1288. ⟨10.1109/TED.2019.2894387⟩
Limited endurance of resistive RAM (RRAM) is a major challenge for future computing systems. Using thorough endurance tests that incorporate fine-grained read operations at the array level, we quantify for the first time temporary write failures (TWF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91cb0a97711daa020f03637e06e09548
http://hdl.handle.net/11392/2403640
http://hdl.handle.net/11392/2403640
Autor:
J-F Nodin, Gabriel Molas, Etienne Nowak, Elisa Vianello, D. R. B. Ly, C. Fenouillet-Beranger, J.-P. Noel, Giacomo Indiveri, Bastien Giraud, Alessandro Grossi, Gilbert Sassine, N. Castellani
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM 2018)
2018 IEEE International Electron Devices Meeting (IEDM 2018), IEEE, Dec 2018, San Francisco, CA, United States. pp.20.3.1-20.3.4, ⟨10.1109/IEDM.2018.8614603⟩
2018 IEEE International Electron Devices Meeting (IEDM 2018), IEEE, Dec 2018, San Francisco, CA, United States. pp.20.3.1-20.3.4, ⟨10.1109/IEDM.2018.8614603⟩
International audience; Resistive Memory (RRAM)-based Ternary Content Addressable Memories (TCAMs) were developed to reduce cell area, search energy and standby power consumption beyond what can be achieved by SRAM-based TCAMs. In previous works, RRA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d10faf3c63a9f463455a0e0925d8f5cc
https://hal.archives-ouvertes.fr/hal-02939330/document
https://hal.archives-ouvertes.fr/hal-02939330/document