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pro vyhledávání: '"Alessandrino, Mario Santi"'
Autor:
Greco, Giuseppe, Fiorenza, Patrick, Giannazzo, Filippo, Bongiorno, Corrado, Moschetti, Maurizio, Bottari, Cettina, Alessandrino, Mario Santi, Iucolano, Ferdinando, Roccaforte, Fabrizio
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations under stre
Externí odkaz:
http://arxiv.org/abs/2212.06442