Zobrazeno 1 - 10 of 65 pro vyhledávání: '"Alessandra Satta"'
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Akademický článek
First principles study of the optical emission of cadmium yellow: Role of cadmium vacancies
Autor: Laura Giacopetti, Austin Nevin, Daniela Comelli, Gianluca Valentini, Marco Buongiorno Nardelli, Alessandra Satta
Publikováno v: AIP Advances, Vol 8, Iss 6, Pp 065202-065202-8 (2018)
We study the role of structural defects in the CdS-based cadmium yellow paint to explain the origin of its deep trap states optical emission. To this end, we combine a first principles study of Cd- and S- vacancies in the wurtzite (101¯0) CdS surfac
Externí odkaz: https://doaj.org/article/f6e099fb91084f22b6af8920c7c2c7a9
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3
Reactivity of Cd-yellow pigments: Role of surface defects
Autor: Alessandra Satta, Laura Giacopetti
Publikováno v: Microchemical journal
137 (2018): 502–508. doi:10.1016/j.microc.2017.12.013
info:cnr-pdr/source/autori:Giacopetti, Laura; Satta, Alessandra/titolo:Reactivity of Cd-yellow pigments: Role of surface defects/doi:10.1016%2Fj.microc.2017.12.013/rivista:Microchemical journal (Print)/anno:2018/pagina_da:502/pagina_a:508/intervallo_pagine:502–508/volume:137
The cadmium yellow paints used in several paintings of the early 1900s are undergoing a process of deterioration the reasons of which are still unclear. Structural defects in CdS, among other possible causes like photo-oxidative reactions, may play a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f70949758d025e8e9432a5de7640d9e
https://doi.org/10.1016/j.microc.2017.12.013
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4
Degradation of Cd-yellow paints: Ab initio study of native defects in {10.0} surface CdS
Autor: Laura Giacopetti, Alessandra Satta
Publikováno v: Microchemical journal
126 (2016): 214–219. doi:10.1016/j.microc.2015.12.005
info:cnr-pdr/source/autori:Giacopetti, Laura; Satta, Alessandra/titolo:Degradation of Cd-yellow paints: Ab initio study of native defects in {10.0} surface CdS/doi:10.1016%2Fj.microc.2015.12.005/rivista:Microchemical journal (Print)/anno:2016/pagina_da:214/pagina_a:219/intervallo_pagine:214–219/volume:126
Relevant effects produced at the surface of modern paintings include the growth of discolored crusts. In the specific case of cadmium yellow paints (CdS), white globular compounds mostly formed by hydrated cadmium sulfate and cadmium carbonate are ob
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::799224d76fe53a2ca44acf2c8dc2db16
http://www.cnr.it/prodotto/i/435722
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6
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
Autor: Francesca Clemente, Marc Meuris, S. Van Elshocht, Alain Moussa, Alessandra Satta, Laurent Souriau, Matty Caymax, Roger Loo, Valentina Terzieva, David P. Brunco
Publikováno v: Thin Solid Films. 517:172-177
In the first part of this work we studied the effect of annealing time and temperature on the degree of threading dislocations density (TDD) reduction in epitaxial Ge films grown by CVD on Si. We show, that one-step controlled nitrogen annealing at t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::adb68b017e78a65f324089a9681ec6ae
https://doi.org/10.1016/j.tsf.2008.08.144
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7
Shallow boron implantations in Ge and the role of the pre-amorphization depth
Autor: Jozefien Goossens, Gijs Brouwers, Marie-Laure David, Alessandra Satta, Frédéric Pailloux, Marc Meuris, Eddy Simoen, Trudo Clarysse, Brigitte Parmentier, Wilfried Vandervorst
Publikováno v: Materials Science in Semiconductor Processing. 11:368-371
The impact of the Ge pre-amorphization conditions on shallow B profiles, resulting from a 1 keV implantation in n-type Ge and a 500 °C 1 min rapid thermal anneal, is investigated. In general, an increase of the sheet resistance with lower Ge energy
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ac669775221b3e70b390ec6ff5be256
https://doi.org/10.1016/j.mssp.2008.09.006
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8
Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$n Junctions
Autor: Cor Claeys, M.M. Heyns, B. De Jaeger, O.S.I. Casain, Sushant Sonde, Eddy Simoen, Marc Meuris, A. Brugere, David P. Brunco, Geert Eneman, M. Wiot, Geert Hellings, Alessandra Satta, K. De Meyer
Publikováno v: IEEE Transactions on Electron Devices. 55:2287-2296
This paper presents an analysis of junction leakage in heavily doped p+/n germanium junctions, targeted for short-channel transistor fabrication. There exists an optimal p+/n junction condition, with a doping concentration of 1 times 1017-5 times 101
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f39347beb3e08dac58bb21550197036
https://doi.org/10.1109/ted.2008.927660
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9
Germanium: The Past and Possibly a Future Material for Microelectronics
Autor: Karl Opsomer, G. Nicholas, Alessandra Satta, Geoffrey Pourtois, David P. Brunco, Valentina Terzieva, Brice De Jaeger, Marc Heyns, Michel Houssa, Laurent Souriau, Frederik Leys, Geert Eneman, Marc Meuris
Publikováno v: ECS Transactions. 11:479-493
Germanium possesses higher bulk mobilities than silicon and was used for the first transistors. However, by the 1960s its use was largely supplanted with Si due largely to Si's high quality thermal oxide. Today, with the 45 nm technology node in prod
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::555fc864a20a6f9b2f944a652b1f162c
https://doi.org/10.1149/1.2779584
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10
Formation of germanium shallow junction by flash annealing
Autor: Wolfgang Skorupa, A. D’Amore, Alessandra Satta, Trudo Clarysse, Tom Janssens, Eddy Simoen, B. Van Daele, W. Anwand
Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 257:157-160
We have investigated flash-lamp annealing (FLA) of germanium wafers doped with phosphorous and boron introduced in the crystal by ion implantation. Annealing was performed by using pre-heating at 400–450 °C in a conventional rapid thermal processi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57375ea50bd7f080fbeb09a99aab4273
https://doi.org/10.1016/j.nimb.2006.12.191
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