Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Alessandra, Leonhardt"'
Autor:
César J. Lockhart de la Rosa, Goutham Arutchelvan, Alessandra Leonhardt, Cedric Huyghebaert, Iuliana Radu, Marc Heyns, Stefan De Gendt
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058301-058301-6 (2018)
Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thic
Externí odkaz:
https://doaj.org/article/af28f4d9502c4e30aac03a8193ef5a04
Autor:
Andrea Illiberi, Michael Givens, Alessandra Leonhardt, Matthew Surman, Ranjith Ramachandran, Mihaela Popovici
Publikováno v:
ECS Meeting Abstracts. :1120-1120
The semiconductor industry has continuously adopted more complex architectures and 3D geometries, while simultaneously down scaling the critical dimensions of the devices. This presentation will briefly review the evolution of the memory device archi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df590e8a46cdd6dbdb911f98bf7152a
https://doi.org/10.1149/ma2022-02311120mtgabs
https://doi.org/10.1149/ma2022-02311120mtgabs
Autor:
Inge Asselberghs, Vivek Mootheri, Albert Minj, Dennis Lin, Alessandra Leonhardt, Goutham Arutchelvan, Marc Heyns, Iuliana Radu
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS 2 , w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0920f610d34eed6b21dc56cf7f4a6439
https://doi.org/10.1109/iitc51362.2021.9537337
https://doi.org/10.1109/iitc51362.2021.9537337
Autor:
Stefan De Gendt, Pierre-Emmanuel Gaillardon, Giovanni De Micheli, Giovanni V. Resta, Yashwanth Balaji, Alessandra Leonhardt
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1486-1503
Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b0913f48119c16cc6a216524eaade85
https://doi.org/10.1109/tvlsi.2019.2914609
https://doi.org/10.1109/tvlsi.2019.2914609
Autor:
Stefan De Gendt, Alessandra Leonhardt, Hartmut Stadler, Steven De Feyter, Miriam C. Rodríguez González, Wim Thielemans, Kunal S. Mali, Samuel Eyley
Publikováno v:
ACS nano. 15(6)
The chemical patterning of graphene is being pursued tenaciously due to exciting possibilities in electronics, catalysis, sensing, and photonics. Despite the intense efforts, spatially controlled, multifunctional covalent patterning of graphene has n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be2b34d0ab69d0cbf83a2c7ed8441973
https://pubmed.ncbi.nlm.nih.gov/34047547
https://pubmed.ncbi.nlm.nih.gov/34047547
Autor:
Vivek, Mootheri, Alessandra, Leonhardt, Devin, Verreck, Inge, Asselberghs, Cedric, Huyghebaert, Stefan, Degendt, Iuliana, Radu, Dennis, Lin, Marc M, Heyns
Publikováno v:
Nanotechnology. 32(13)
2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::3f0600a8a2a31ac3e6594dcfbacee2c5
https://pubmed.ncbi.nlm.nih.gov/33410418
https://pubmed.ncbi.nlm.nih.gov/33410418
Autor:
Inge Asselberghs, Iuliana Radu, Alessandra Leonhardt, Michel Houssa, Surajit Sutar, Dennis Lin, Goutham Arutchelvan, Cedric Huyghebaert, Vivek Mootheri, Sreetama Banerjee, Marc Heyns, Marie-Emmanuelle Boulon
Device performance of two dimensional (2D) material based field effect transistors is severely limited by the relatively high contact resistance encountered at the contact-channel interface. Metal-graphene hybrid contacts have been previously used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daafb845d38df9fbde662c7dad4e3fd1
https://lirias.kuleuven.be/handle/123456789/671223
https://lirias.kuleuven.be/handle/123456789/671223
Autor:
Cesar Javier Lockhart de la Rosa, Thomas Nuytten, Luca Banszerus, Stefanie Sergeant, Vivek K. Mootheri, Takashi Taniguchi, Kenji Watanbe, Christoph Stampfer, Cedric Huyghebaert, Stefan De Gendt, Alessandra Leonhardt
Defect characterization of 2D materials is a critical aspect for their successful integration in future electronic devices. Here, a simple characterization technique is proposed that opens a path for fast, non-invasive, quality assessment of transiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::7b68e9e71ad5d03bcafd869e639d1f4c
https://zenodo.org/record/4686975
https://zenodo.org/record/4686975
Autor:
Alessandra Leonhardt, Daniele Chiappe, César J. Lockhart de la Rosa, Anda Mocuta, Philippe Matagne, Stefan De Gendt, Anh Khoa Augustin Lu, Marc Heyns, Devin Verreck, Goutham Arutchelvan, Geoffrey Pourtois, Iuliana Radu
Publikováno v:
IEEE Transactions on Electron Devices. 65:4635-4640
2-D material FETs hold the promise of excellent gate control, but the impact of nonidealities on their performance remains poorly understood. This is because of the need, so far, to use computationally intensive nonequilibrium Green’s function (NEG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::120156cccc6db1aaf04cd07961293607
https://doi.org/10.1109/ted.2018.2863750
https://doi.org/10.1109/ted.2018.2863750
Autor:
Stefan De Gendt, Ken Verguts, Yves Defossez, Steven Brems, Cedric Huyghebaert, Joke De Messemaeker, Koen Schouteden, Chris Van Haesendonck, Alessandra Leonhardt
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:M195-M200
ispartof: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY vol:7 issue:12 pages:M195-M200 ispartof: location:WA, Seattle status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93f9c8879bc013d93de956091c6f0678
https://doi.org/10.1149/2.0101812jss
https://doi.org/10.1149/2.0101812jss