Zobrazeno 1 - 10
of 198
pro vyhledávání: '"Alen, B."'
Autor:
Laurindo Jr., V., Castro, E. D. Guarin, Jacobsen, G. M., de Oliveira, E. R. C., Domenegueti, J. F. M., Alén, B., Mazur, Yu. I., Salamo, G. J., Marques, G. E., Marega Jr., E., Teodoro, M. D., Lopez-Richard, V.
This paper discusses the combined effects of optical excitation power, interface roughness, lattice temperature, and applied magnetic fields on the spin-coherence of excitonic states in GaAs/AlGaAs multiple quantum wells. For low optical powers, at l
Externí odkaz:
http://arxiv.org/abs/2107.02129
Autor:
Laurindo Jr., V., Mazur, Yu. I., de Oliveira, E. R. Cardozo, Alén, B., Ware, M. E., Marega Jr., E., Zhuchenko, Z. Ya., Tarasov, G. G., Marques, G. E., Teodoro, M. D., Salamo, G. J.
Publikováno v:
Phys. Rev. B 100, 035309 (2019)
A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier thickness at str
Externí odkaz:
http://arxiv.org/abs/1902.05812
Autor:
Llorens, J. M., Lopes-Oliveira, V., López-Richard, V., de Oliveira, E. R. Cardozo, Wevior, L., Ulloa, J. M., Teodoro, M. D., Marques, G. E., García-Cristóbal, A., Quiang-Hai, G., Alén, B.
Publikováno v:
Phys. Rev. Applied 11, 044011 (2019)
We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type II InAs/GaAsSb quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the ex
Externí odkaz:
http://arxiv.org/abs/1710.08828
Autor:
Gonzalo, A., Utrilla, A. D., Reyes, D. F., Braza, V., Llorens, J. M., Marron, D. Fuertes, Alen, B., Ben, T., Gonzalez, D., Guzman, A., Hierro, A., Ulloa, J. M.
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separa
Externí odkaz:
http://arxiv.org/abs/1612.05033
Autor:
Alonso-Álvarez, D., Alén, B., Ripalda, J. M., Rivera, A., Taboada, A. G., Llorens, J. M., González, Y., González, L., Briones, F.
Publikováno v:
APL Materials. 1, 022112 (2013)
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anoma
Externí odkaz:
http://arxiv.org/abs/1108.1768
Publikováno v:
J. Appl. Phys. 110, 043538 (2011)
ZnO films have been grown on gold (111) by electrodeposition using two different OH- sources, nitrate and peroxide, in order to obtain a comparative study between these films. The morphology, structural and optical characterization of the films were
Externí odkaz:
http://arxiv.org/abs/1107.2762
Autor:
Muñoz-Matutano, G., Royo, M., Climente, J. I., Canet-Ferrer, J., Fuster, D., Alonso-González, P., Fernández-Martínez, I., Martínez-Pastor, J., González, Y., González, L., Briones, F., Alén, B.
Publikováno v:
Physical Review B 84, 041308 (R) (2011)
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applie
Externí odkaz:
http://arxiv.org/abs/1104.4939
Autor:
Alonso-Álvarez., D., Alén, B., Ripalda, J. M., Rivera, A., Taboada, A. G., Llorens, J. M., González, Y., González, L., Briones, F.
In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain
Externí odkaz:
http://arxiv.org/abs/1102.4944
Autor:
Alonso-Álvarez, D., Alén, B., Ripalda, J. M., Llorens, J., Taboada, A. G., Briones, F., Roldán, M. A., Hernández-Saz, J., Hernández-Maldonado, D., Herrera, M., Molina, S. I.
Publikováno v:
Appl. Phys. Lett. 98, 173106 (2011)
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be contr
Externí odkaz:
http://arxiv.org/abs/1102.4490
Autor:
Alen, B., Fuster, D., Fernandez-Martinez, I., Martinez-Pastor, J., Gonzalez, Y., Briones, F., Gonzalez, L.
Publikováno v:
Nanotechnology 20 (2009) 475202
We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a la
Externí odkaz:
http://arxiv.org/abs/0803.0569