Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Aleksey I. Mikhaylov"'
Autor:
Victor V. Luchinin, Adolf Schöner, Alexey V. Afanasyev, Vladimir A. Ilyin, Sergey A. Reshanov, Aleksey I. Mikhaylov
Publikováno v:
Semiconductors. 54:122-126
A method for reducing the on-state resistance of a high-power 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of epitaxial layers on the surface of the heavily doped p-region is proposed. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b58ba5cc1eba86a15005ba8fa6159c
https://doi.org/10.1134/s1063782620010157
https://doi.org/10.1134/s1063782620010157
Autor:
Sergey A. Reshanov, Victor V. Luchinin, Vladimir A. Ilyin, Adolf Schöner, Aleksey I. Mikhaylov, Alexey V. Afanasyev
Publikováno v:
Semiconductors. 50:824-827
A new method is suggested for increasing the carrier mobility in the channel of a field-effect transistor based on silicon carbide of the 4H polytype via the oxidation of a bilayer system constituted by a thin layer of silicon nitride and a silicon-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c5a419f9308bb1f0a5abcac70b616b4
https://doi.org/10.1134/s1063782616060178
https://doi.org/10.1134/s1063782616060178
Autor:
Victor V. Luchinin, Giovanni Alfieri, Aleksey I. Mikhaylov, H. Bartolf, Lars Knoll, Alexey V. Afanasyev, Sergey A. Reshanov, Adolf Schöner, Renato Minamisawa
Publikováno v:
Materials Science Forum. 858:651-654
High channel mobility 4H-SiC MOSFETs have been demonstrated by phosphorus and arsenic implantation prior to thermal oxidation in N2O. The maximum field-effect mobility of 81 and 114 cm2/Vs were achieved, respectively. The MOSFET fabrication was done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::659ed0dcaffcfd9c3120dcf1fbfc845d
https://doi.org/10.4028/www.scientific.net/msf.858.651
https://doi.org/10.4028/www.scientific.net/msf.858.651
Autor:
Alexey V. Afanasyev, Renato Minamisawa, Giovanni Alfieri, Lars Knoll, H. Bartolf, Victor V. Luchinin, Aleksey I. Mikhaylov, Sergey A. Reshanov, Adolf Schöner
Publikováno v:
Materials Science Forum. :480-483
Electrical properties of the gate oxides thermally grown in N2O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::401b47957387bf12e8fcc80d861224cd
https://doi.org/10.4028/www.scientific.net/msf.821-823.480
https://doi.org/10.4028/www.scientific.net/msf.821-823.480
Autor:
Renato Minamisawa, Adolf Schöner, Sergey A. Reshanov, Aleksey I. Mikhaylov, Alexey V. Afanasyev, Giovanni Alfieri, H. Bartolf, Lars Knoll, Victor V. Luchinin
Publikováno v:
Materials Science Forum. :508-511
The effect of the alternative nitridation process of the 4H-SiC/SiO2interface by introduction of a thin silicon nitride layer on the electrical properties of the gate oxide has been investigated.C-VandG-Vmeasurements on inversion-channel MOS devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e33f443fd035667c840226317809e02c
https://doi.org/10.4028/www.scientific.net/msf.821-823.508
https://doi.org/10.4028/www.scientific.net/msf.821-823.508
Autor:
Victor V. Luchinin, A. V. Afanasiev, Vladimir A. Ilyin, Tomasz Sledziewski, Adolf Schöner, Sergey A. Reshanov, Michael Krieger, Aleksey I. Mikhaylov
Publikováno v:
Semiconductors. 48:1581-1585
A method is suggested for reducing the density of surface states at the 4H-SiC/SiO2 interface by the implantation of phosphorus ions into a 4H-SiC epitaxial layer immediately before the growth of a gate insulator in an atmosphere of dry oxygen. A sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a64ff771b80af490b9265079f3d756c
https://doi.org/10.1134/s1063782614120148
https://doi.org/10.1134/s1063782614120148
Autor:
Tomasz Sledziewski, Michael Krieger, Victor V. Luchinin, Adolf Schöner, Aleksey I. Mikhaylov, Alexey V. Afanasyev, Sergey A. Reshanov
Publikováno v:
Materials Science Forum. 806:133-138
The electrical properties of metal-oxide-semiconductor (MOS) devices fabricated using dry oxidation on phosphorus-implanted n-type 4H-SiC (0001) epilayers have been investigated. MOS structures were compared in terms of interface traps and reliabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb4f02ee325b5b79161b46247c81dc01
https://doi.org/10.4028/www.scientific.net/msf.806.133
https://doi.org/10.4028/www.scientific.net/msf.806.133
Autor:
Cheng-Tyng Yen, Jeng Hua Wei, Chien Chung Hung, Aleksey I. Mikhaylov, Ting Yu Chiu, Adolf Schöner, Chwan Ying Lee, Chih-Fang Huang, Sergey A. Reshanov, Lurng Shehng Lee
Publikováno v:
Materials Science Forum. :989-992
Two kinds of gate oxides, direct thermal oxidation in a nitrous oxide ambient at 1250°C(TGO) and a PECVD oxide followed by a post deposition oxidation in nitrous at 1150°C (DGO) were studied. DGO showed a lower interface trap density and was able t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7cfea95aaa7098bd2c9180f81fb6fdb
https://doi.org/10.4028/www.scientific.net/msf.778-780.989
https://doi.org/10.4028/www.scientific.net/msf.778-780.989
Autor:
Victor V. Luchinin, Alexey V. Afanasyev, Aleksey I. Mikhaylov, Sergey A. Reshanov, Adolf Schöner
Publikováno v:
MRS Proceedings. 1693
An alternative approach for reduction of interface traps density at 4H-SiC/SiO2 interface is proposed. Silicon nitride / silicon oxide stack was deposited on p-type 4H-SiC (0001) epilayers and subsequently over-oxidized. The electrical characterizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79bc0e6d20e8f3b48cd956d9936bb3ed
https://doi.org/10.1557/opl.2014.619
https://doi.org/10.1557/opl.2014.619
Autor:
H. Bartolf, Lars Knoll, Adolf Schöner, Victor V. Luchinin, Aleksey I. Mikhaylov, Sergey A. Reshanov, Alexey V. Afanasyev, Renato Minamisawa, Giovanni Alfieri
Publikováno v:
Japanese Journal of Applied Physics. 55:08PC04
In this paper, we compare the performance of lateral MOSFETs fabricated with different gate oxide formation processes on p-type epilayers with doping concentration in the range of 1 × 1016 cm−3 against Al-implanted p-well doped to 1 × 1018 cm−3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866412f4e5e2a57e2c48dc7443f35a20
https://doi.org/10.7567/jjap.55.08pc04
https://doi.org/10.7567/jjap.55.08pc04