Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Aleksey G. Gorobchuk"'
Publikováno v:
ACTUAL PROBLEMS OF CONTINUUM MECHANICS: EXPERIMENT, THEORY, AND APPLICATIONS.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e172aefc6be71d73bf4db1740a2f7954
https://doi.org/10.1063/5.0132321
https://doi.org/10.1063/5.0132321
Publikováno v:
HIGH-ENERGY PROCESSES IN CONDENSED MATTER (HEPCM 2020): Proceedings of the XXVII Conference on High-Energy Processes in Condensed Matter, dedicated to the 90th anniversary of the birth of RI Soloukhin.
Numerical calculations of the flow in a plane supersonic boundary layer of vibrationally excited gas in locally self-similar and original formulations were carried out. Some characteristic conditions of the external flow and heat transfer at the boun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d0e6b692bf7c3837b97e0206da06046
https://doi.org/10.1063/5.0028577
https://doi.org/10.1063/5.0028577
Autor:
Aleksey G. Gorobchuk
Publikováno v:
2015 International Siberian Conference on Control and Communications (SIBCON).
In the frame of hydrodynamical approach a technology of plasma-chemical etching silicon in CF 4 /H 2 plasma was simulated. The model of plasma-chemical kinetics contained 28 gas-phase reactions including the components F, F 2 , CF 2 , CF 3 , CF 4 , C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ef11bfe8c3a6f076a31eca67e977d2e
https://doi.org/10.1109/sibcon.2015.7147029
https://doi.org/10.1109/sibcon.2015.7147029
Publikováno v:
2013 International Siberian Conference on Control and Communications (SIBCON).
The plasma-chemical etching technology in RF discharge was simulated in hydrodynamical approach. The calculations based on the mathematical model of plasma-chemical reactor in which gas flow was described by the convective-diffusion equations of mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29ce654e77e5bfde15a644cbe6f4d33e
https://doi.org/10.1109/sibcon.2013.6693616
https://doi.org/10.1109/sibcon.2013.6693616
Publikováno v:
2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON).
The effect of RF discharge structure on silicon etching process in CF 4 /O 2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF disc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d40c8da2d8f937940fec50c83ec9077f
https://doi.org/10.1109/sibircon.2010.5555375
https://doi.org/10.1109/sibircon.2010.5555375
Publikováno v:
Micro Electronic and Mechanical Systems
The growing rates of microchip world production during the last two decades exceed essentially the corresponding indexes of any others production branches. Between 1997 and 2003 the consumer and communication electronics sales have grown from USD 744
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f527a940e5bb356030f20573d8a3c6ce
https://doi.org/10.5772/7012
https://doi.org/10.5772/7012
