Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Aleksey A. Leonov"'
Autor:
Sergey I. Suchkov, Irina V. Arkhangelskaja, Andrey I. Arkhangelskiy, Aleksey V. Bakaldin, Irina V. Chernysheva, Arkady M. Galper, Oleg D. Dalkarov, Andrey E. Egorov, Maxim D. Kheymits, Mikhail G. Korotkov, Aleksey A. Leonov, Svetlana A. Leonova, Alexandr G. Malinin, Vladimir V. Mikhailov, Pavel Yu Minaev, Nikolay Yu. Pappe, Mikhail V. Razumeyko, Nikolay P. Topchiev, Yuri T. Yurkin
Publikováno v:
Universe, Vol 9, Iss 8, p 369 (2023)
The upcoming GAMMA-400 experiment will be implemented aboard the Russian astrophysical space observatory, which will be operating in a highly elliptical orbit over a period of 7 years to provide new data on gamma-ray emissions and cosmic-ray electron
Externí odkaz:
https://doaj.org/article/318dcead5e3d4df798ed4ae0545a63d2
Autor:
Mikhail V. Antonenko, Aleksey V. Leonov, Evgeny V. Bespala, Dmitry O. Chubreev, Yuliya R. Bespala
Publikováno v:
Известия Томского политехнического университета: Инжиниринг георесурсов, Vol 330, Iss 7, Pp 130-139 (2019)
The relevance of the discussed issue is caused by the need to develop new innovative non-destructive technologies of integrity reinstating and unwatering safety barriers based on mixture of natural clays, developed during decommissioning nuclear lega
Externí odkaz:
https://doaj.org/article/f0ed57903ceb404b960b3b75c49578de
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 4, Pp 155-158 (2020)
Modern Electronic Materials 6(4): 155-158
Modern Electronic Materials 6(4): 155-158
The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9393aee5ec1948a327dc14398f52775
https://moem.pensoft.net/article/65567/
https://moem.pensoft.net/article/65567/
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
The Article shows that the effect of charge coupling between the gates of SOI MOS field-effect transistors is also observed in double-gate transistor magnetosensitive Hall-type elements with a silicon film thickness of about 200 nm. It has been deter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c87e00a10ea12cf5074072f817aa17c
https://doi.org/10.29003/m1617.silicon-2020/261-263
https://doi.org/10.29003/m1617.silicon-2020/261-263
Publikováno v:
Innotrans. :62-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4a33bbf7b8b9ead9afd5a79d48a0e5
https://doi.org/10.20291/2311-164x-2016-2-62-66
https://doi.org/10.20291/2311-164x-2016-2-62-66
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 4, Pp 155-158 (2020)
The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high p
Externí odkaz:
https://doaj.org/article/7f1e2bbd54e04d56a7822780bc5dc4ca