Výsledky vyhledávání - "Aleksei Bloshkin"

Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Autor: Aleksei Bloshkin, D. E. Utkin, V. V. Kirienko, A. I. Yakimov, A. V. Dvurechenskii

Publikováno v: Nanomaterials, Vol 11, Iss 2302, p 2302 (2021)
Nanomaterials; Volume 11; Issue 9; Pages: 2302
Nanomaterials

Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum effici

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5fa555a70263c59cfd73138ef3ea61c
https://www.mdpi.com/2079-4991/11/9/2302

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Quantum dot based mid-infrared photodetector enhanced by a hybrid metal-dielectric optical antenna

Autor: V. V. Kirienko, A. I. Yakimov, A. V. Dvurechenskii, D. E. Utkin, Aleksei Bloshkin

Publikováno v: Journal of physics D: Applied physics. 2020. Vol. 53, № 33. P. 335105 (1-7)

Surface plasmon waves and Rayleigh anomaly are characteristic optical phenomena exhibited

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4f55cb92016f3270652908ad085890d
https://doi.org/10.1088/1361-6463/ab84a7

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Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)

Autor: A. I. Nikiforov, A. I. Yakimov, Vyacheslav Timofeev, Anatolii Dvurechenskii, Aleksei Bloshkin

Publikováno v: Nanoscale Research Letters

Ge/Si quantum dots fabricated by molecular-beam epitaxy at 500°C are overgrown with Si at different temperatures Tcap, and effect of boron delta doping of Si barriers on the mid-infrared photoresponse was investigated. The photocurrent maximum shift

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c63b685cfa9f438a41c96b1cb623cd1
http://europepmc.org/articles/PMC3499146

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Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors

Autor: Anatolii Dvurechenskii, Vyacheslav Timofeev, Aleksei Bloshkin, A. I. Yakimov, V. V. Kirienko

Publikováno v: Nanoscale Research Letters

We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e913ed5f1dee8c76802c321f9dbc095e

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Electromodulated reflectance study of self-assembled Ge/Si quantum dots

Autor: Aleksei Bloshkin, A. I. Yakimov, A. I. Nikiforov, Anatolii Dvurechenskii

Publikováno v: Nanoscale Research Letters, Vol 6, Iss 1, p 208 (2011)
Nanoscale Research Letters

We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c465990818da8ca96833dc12ae9f036d

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