Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Aleksandras Narkūnas"'
Autor:
Algirdas SUŽIEDĖLIS, Steponas AŠMONTAS, Jonas GRADAUSKAS, Viktorija NARGELIENĖ, Aurimas ČERŠKUS, Andžej LUČUN, Tomas ANBINDERIS, Irina PAPSUJEVA, Aleksandras NARKŪNAS, Benas KUNDROTAS, Roma RINKEVIČIENĖ
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 138-140 (2014)
In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunctio
Externí odkaz:
https://doaj.org/article/f8499880ebce4b28aba14f029eba25a9
Autor:
Aurimas Čerškus, Benas Kundrotas, A. Lučun, R. Rinkevičienė, Jonas Gradauskas, Steponas Ašmontas, Irina Papsujeva, Viktorija Nargelienė, Algirdas Sužiedėlis, Aleksandras Narkūnas, T. Anbinderis
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 138-140 (2014)
In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunctio
Autor:
Aurimas Čerškus, Viktorija Kazlauskaitė, Hadas Shtrikmann, Jonas Gradauskas, Irina Papsujeva, Jurgis Kundrotas, A. Kozič, Gytis Steikūnas, Steponas Ašmontas, Valerij Petkun, Algirdas Sužiedėlis, T. Anbinderis, Vladimir Umansky, Aleksandras Narkūnas
Publikováno v:
SPIE Proceedings.
Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with d-doped layer were investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of modulation doped structures wit