Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Aleksandra Malko"'
Autor:
Seifeddine Fakhfakh, Guillaume Callet, Estelle Byk, Laurent Favede, Aleksandra Malko, Sandra Riedmueller, Pierre Denis, Herve Blanck, Marc Camiade
Publikováno v:
2021 16th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f66d273e78a5c99847be2b6a5577a622
https://doi.org/10.23919/eumic50153.2022.9783965
https://doi.org/10.23919/eumic50153.2022.9783965
Autor:
Niklas Rorsman, Manfred Madel, Travis L. Sandy, Peter E. Raad, Mattias Thorsell, Ding Yuan Chen, Pavel L. Komarov, Kristoffer Andersson, Sten E. Gunnarsson, Johan Bremer, Torbjorn M.J. Nilsson, Aleksandra Malko
Publikováno v:
IEEE Transactions on Electron Devices. 67:1952-1958
This article presents an electric-based methodology for thermal characterization of semiconductor technologies. It is shown that for technologies such as gallium nitride (GaN) high electron mobility transistors, which exhibit several field induced el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2788c55e6db041fa2a7c9d07f50ba0f4
https://doi.org/10.1109/ted.2020.2983277
https://doi.org/10.1109/ted.2020.2983277
Publikováno v:
Proceedings of the IEEE. 105:1008-1019
There is a high demand for compact, room-temperature sources operating at millimeter-wave and terahertz (THz) frequencies for space instruments and terrestrial applications. This part of the electromagnetic spectrum is by far the least explored becau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a84ddb37f16fd1b2e9c7d192947087
https://doi.org/10.1109/jproc.2016.2646761
https://doi.org/10.1109/jproc.2016.2646761
Publikováno v:
Journal of Crystal Growth. 425:89-93
© 2015 Elsevier B.V. All rights reserved. InAs films were grown on GaAs substrates by molecular beam epitaxy (MBE) without or with different Bi fluxes. The effect of Bi on the structural and electrical properties of the InAs films was studied. Atomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f5182d00ed56ac72075de9aa640b0cf
https://doi.org/10.1016/j.jcrysgro.2015.02.050
https://doi.org/10.1016/j.jcrysgro.2015.02.050
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. :1-7
We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( $\times$ 5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c0a461cc51a4a488f265975a00ed814
https://doi.org/10.1109/tthz.2014.2378793
https://doi.org/10.1109/tthz.2014.2378793
Autor:
Josip Vukusic, Huan Zhao, Aleksandra Malko, Tomas Bryllert, Jan Stake, Peter Sobis, Vladimir Drakinskiy
Publikováno v:
2015 Asia-Pacific Microwave Conference (APMC).
We present an overview of research on integrated diode circuits for terahertz applications carried out at Chalmers University of Technology. This includes progress on heterogeneous integration of heterostructure barrier varactor multipliers on silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1a7d5a420e28000e298e1724de6335
https://doi.org/10.1109/apmc.2015.7411749
https://doi.org/10.1109/apmc.2015.7411749
Publikováno v:
IEEE Electron Device Letters. 34:843-845
We present an integrated heterostructure barrier varactor frequency tripler on silicon substrate. The InGaAs/InAlAs/AlAs material structure is transferred onto the silicon wafer using low-temperature plasma-assisted bonding. The presented multiplier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab6510614d4801f37c758f4629ea774c
https://doi.org/10.1109/led.2013.2262131
https://doi.org/10.1109/led.2013.2262131
Publikováno v:
IEEE Microwave and Wireless Components Letters. 22:76-78
In this letter, we present a fixed tuned 175 GHz frequency quintupler with 60 mW output power. The peak efficiency is 6.3% and the 3 dB bandwidth is 8 GHz. The multiplier is based on a single Heterostructure Barrier Varactor (HBV) diode that is flip-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d5de5657d7a677e24085aa5ffed106
https://doi.org/10.1109/lmwc.2011.2181494
https://doi.org/10.1109/lmwc.2011.2181494
Publikováno v:
2012 International Conference on Indium Phosphide and Related Materials.
We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) frequency tripler operating in the W-band frequency range. The device utilizes series connection of four HBV diode mesas, with total 12 barriers, and a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85740770e0e64acabca0c99ea489c61a
https://doi.org/10.1109/iciprm.2012.6403327
https://doi.org/10.1109/iciprm.2012.6403327
Autor:
Robin Dahlbäck, Peter Sobis, Vladimir Drakinskiy, Aleksandra Malko, Josip Vukusic, Huan Zhao, Jan Stake, Johanna Hanning, Aik-Yean Tang, Tomas Bryllert
Publikováno v:
2012 19th International Conference on Microwaves, Radar & Wireless Communications.
We present the development of integrated submillimeter wave receivers and transmitters based on Schottky- and HBV-diode technology at Chalmers University of technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1097c50057e3bdaf161671edf9eee0a5
https://doi.org/10.1109/mikon.2012.6233504
https://doi.org/10.1109/mikon.2012.6233504