Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Aleksandr Zaslavski"'
Autor:
Yuri Dekhtyar, Gennady Enichek, E. Pajuste, Marina Romanova, Aleksandr Zaslavski, L. Avotina, Gunta Kizane, Petr Pokorný, Mindaugas Andrulevičius, Tom Yager, Michal Novotný
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 471:17-23
Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dac7ec294c79e912cc8f6bb176db072
https://doi.org/10.1016/j.nimb.2020.03.010
https://doi.org/10.1016/j.nimb.2020.03.010
Autor:
Ben Schmidt, Yuri Dekhtyar, Aleksandr Zaslavski, Aleksandr Vilken, Marina Romanova, Gennady Enichek, Tom Yager
Publikováno v:
Physica B: Condensed Matter. 586:412123
An electron irradiation assisted photoelectron emission technique was developed to study charge traps for nanolayered Si3N4 and SiO2. Sharp emission peaks were induced by electron irradiation, with characteristic energies revealing their microscopic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48483b7055955fbb437dc5b15de747ab
https://doi.org/10.1016/j.physb.2020.412123
https://doi.org/10.1016/j.physb.2020.412123
Autor:
Hermanis Sorokins, L. Avotina, Aleksandr Zaslavski, Yuri Dekhtyar, Evgeny Shulzinger, Marina Romanova, Ben Schmidt, Aleksandr Vilken, Gennady Enichek
Publikováno v:
2018 16th Biennial Baltic Electronics Conference (BEC).
Multilayer Si 3 N 4 consisting of Si 3 N 4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si 3 N 4 , the multilayer Si 3 N 4 had one-third les
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24c6bb21e1c8a5d092becdce1c5dfd7
https://doi.org/10.1109/bec.2018.8600964
https://doi.org/10.1109/bec.2018.8600964