Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Aleksandr S. Lenshin"'
Autor:
Pavel Vladimirovich Seredin, Nikolay Kurilo, Dmitry L. Goloshchapov, Vladimir Kashkarov, Aleksandr S. Lenshin, Nikita Buylov, Dmitry Nesterov, Andrey Mizerov, Sergey A. Kukushkin, S. Timoshnev, K. Yu. Shubina, M. S. Sobolev
Publikováno v:
Photonics, Vol 10, Iss 11, p 1209 (2023)
The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si subs
Externí odkaz:
https://doaj.org/article/74efe202a4f643bbb67a34579232f272
Autor:
Vladimir M. Kashkarov, Aleksandr S. Lenshin, Pavel V. Seredin, Dmitriy A. Minakov, Boris L. Agapov, Vladimir N. Tsipenyuk
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 127-130 (2016)
Porous silicon (por-Si) has a unique combination of physicochemical parameters: well-developed surface and hence high sorption. Depending on technology it is possible to form nanometer size pores and clusters in porous silicon which makes this materi
Externí odkaz:
https://doaj.org/article/b9672f8796254fbc9040e4913366e05f
Autor:
Aleksandr S. Lenshin, Yaroslav A. Peshkov, Konstantin A. Barkov, Margarita V. Grechkina, Anatoliy N. Lukin, Sergey V. Kannykin, Dmitriy A. Minakov, Olga V. Chernousova
Publikováno v:
Coatings. 13:385
Porous silicon samples with a porosity index of 5% to 80% were obtained in this work by electrochemical etching, and their photoluminescence properties were also studied. The porosity index was calculated according to the data from X-ray reflectometr
Publikováno v:
Coatings. 12:1994
The surface of any solid-state object is characterized by enhanced surface energy as compared with the volume of a part of the bulk object [...]
Autor:
Pavel Seredin, Aleksandr S. Lenshin, B. L. Agapov, V. M. Kashkarov, Natalia Skopintseva, D. A. Minakov
Publikováno v:
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech).
Using scanning electron microscopy and infrared spectroscopy, some peculiarities in the formation of multilayer porous silicon were investigated. The effect of the changes in the current density during electrochemical etching of silicon on the compos
Autor:
Vladimir N. Tsipenyuk, Pavel Seredin, B. L. Agapov, Aleksandr S. Lenshin, V. M. Kashkarov, Dmitriy A. Minakov
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 127-130 (2016)
Porous silicon (por-Si) has a unique combination of physicochemical parameters: well-developed surface and hence high sorption. Depending on technology it is possible to form nanometer size pores and clusters in porous silicon which makes this materi
Autor:
Jan M. Olchowik, Maxim G. Anchkov, Aleksandr S. Lenshin, Vladimir V. Kuznetsov, I. E. Gracheva, V. A. Moshnikov, Yulia Spivak
Publikováno v:
Journal of Non-Crystalline Solids. 358:590-595
This paper presents an analysis of the sol deposition process on porous silicon in order to produce highly sensitive gas detectors. Sol solutions were deposited within the dendrite structural pore regions of n-type silicon. The parameters for the str
Publikováno v:
Конденсированные среды и межфазные границы. 19:417
В работе комплексом спектроскопических методов изучены свойства эпитаксиальных твердых растворов GaxIn1-xP с упорядоченным расположением
Autor:
Vera Евгеньевна Ternovaya, Pavel Seredin, I. N. Arsentyev, Aleksandr S. Lenshin, Tatiana Prutskij
Publikováno v:
Конденсированные среды и межфазные границы. 19:296
В работе на основе комплекса данных, полученных структурными и микроскопическими методами, изучены свойства эпитаксиальных твердых ра