Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Aleksandr G. Belov"'
Autor:
Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Nikita Yu. Komarovskiy, Irina B. Parfent'eva, Evgeniya V. Chernyshova
Publikováno v:
Modern Electronic Materials, Vol 9, Iss 2, Pp 69-76 (2023)
The optical and electrical properties of zinc-doped Cz p-GaAs have been studied. Reflection spectra of ten p-GaAs specimens have been taken in the mid-IR region. Van der Pau galvanomagnetic, electrical resistivity and Hall coefficient measurements ha
Externí odkaz:
https://doaj.org/article/e98927c2b96a4bb1bfe0caa90639289a
Autor:
Yuri N. Parkhomenko, Aleksandr G. Belov, Elena V. Molodtsova, Roman Yu. Kozlov, Svetlana S. Kormilitsina, Eugene O. Zhuravlev
Publikováno v:
Modern Electronic Materials, Vol 8, Iss 4, Pp 165-171 (2022)
The concentrations of conduction electrons in n-GaSb at 295 and 77 K have been calculated taking into account the non-parabolic deviation of the conduction band shape. We show that at T = 295 K the concentration of heavy electrons in the L-valley of
Externí odkaz:
https://doaj.org/article/751bf4f187544ba5a271c72f77da3ae3
Autor:
Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Irina B. Parfent'eva
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 3, Pp 79-84 (2021)
A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account
Externí odkaz:
https://doaj.org/article/1243a2d6f3114828a3ee1bb2993d629e
Autor:
Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into a
Externí odkaz:
https://doaj.org/article/d83dbe80d4ea493e908cb205ef5436ff
Autor:
Vadim A. Golubiatnikov, Fedor I. Grigor’ev, Aleksandr P. Lysenko, Natal׳ya I. Strogankova, Mukhamed B. Shadov, Aleksandr G. Belov, Vladimir E. Kanevsky
Publikováno v:
Modern Electronic Materials, Vol 1, Iss 3, Pp 93-96 (2015)
A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT), etc. T
Externí odkaz:
https://doaj.org/article/196f6d2140834624932b5d2e0928862c
Autor:
Aleksandr G. Belov, Irina B. Parfent'eva, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Tatyana G. Yugova
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 3, Pp 79-84 (2021)
Modern Electronic Materials 7(3): 79-84
Modern Electronic Materials 7(3): 79-84
A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a23f5c0477cad36c89a48e6f22b1dd0
https://zenodo.org/record/5751160
https://zenodo.org/record/5751160
Autor:
Aleksandr G. Belov, Tatyana G. Yugova, Stanislav N. Knyazev, Vladimir E. Kanevskii, Evgeniya I. Kladova
Publikováno v:
Modern Electronic Materials 6(3): 85-89
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfd87ce44c1392a28171577d6aa99d64
https://zenodo.org/record/4592820
https://zenodo.org/record/4592820
Publikováno v:
Pedagogy, Psychology, Society; 117-123
Общество, педагогика, психология; 117-123
Общество, педагогика, психология; 117-123
В статье авторы рассматривают роль физической культуры и спорта в современном обществе, основные пути реализации государственной поли
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b8f80698ebec3301db820a6d9a0d0ee5
https://phsreda.com/article/96269/discussion_platform
https://phsreda.com/article/96269/discussion_platform
Autor:
Mukhamed B. Shadov, Fedor I. Grigor’ev, Vladimir E. Kanevsky, Natal׳ya I. Strogankova, Aleksandr G. Belov, Vadim A. Golubiatnikov, Aleksandr P. Lysenko
Publikováno v:
Modern Electronic Materials, Vol 1, Iss 3, Pp 93-96 (2015)
A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT), etc. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7127458c4fc8108c265ad2e220a824e6
https://doi.org/10.1016/j.moem.2016.03.004
https://doi.org/10.1016/j.moem.2016.03.004