Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Aleksandr E. Koziukov"'
Autor:
A. A. Kalashnikova, A. Privat, K. B. Bu-Khasan, Aleksandr E. Koziukov, K. Muthuseenu, M. Y. Vyrostkov, Kenneth F. Galloway, Hugh J. Barnaby, T. A. Maksimenko
Publikováno v:
IEEE Transactions on Nuclear Science. 68:611-616
This article compares and analyzes the single-event gate rupture (SEGR) response of silicon planar gate super-junction (SJ) power metal oxide semiconductor field effect transistors (MOSFETs) and vertical double diffused power MOSFETs (VDMOSs). When a
Autor:
Linaris R. Bakirov, Larisa A. Vaishnene, A. S. Vorobyev, Evgeni M. Ivanov, Aleksandr E. Koziukov, Oleg Shcherbakov, Vasily S. Anashin, Alexei M. Gagarski
Publikováno v:
IEEE Transactions on Nuclear Science. 63:2152-2158
A description of the testing facility ISNP with spectrum resembling that of terrestrial neutron radiation developed at the PNPI (Gatchina) is given. A broad spectrum (1–1000 MeV) spallation neutron source of the facility with a neutron flux of $4 \
Autor:
Elena V. Marina, Pavel A. Monakhov, Emil F. Imametdinov, Maxim S. Gorbunov, Aleksandr E. Koziukov, Vasily S. Anashin, Andrey A. Klyayn, Andrey A. Antonov
Publikováno v:
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We present the direct experimental vulnerability comparison of two microprocessor designs with different Single Event Effects (SEE) mitigation techniques at different heavy ion fluxes. The trade-off between the performance, fault-tolerance and power
Autor:
Grigory A. Protopopov, Pavel A. Chubunov, Aleksandr E. Koziukov, Aleksey Konyukhov, Vasily S. Anashin
Publikováno v:
2018 20th International Symposium on High-Current Electronics (ISHCE).
One of the very important challenges for space system engineers is to ensure the radiation tolerance of electronic components and spacecraft equipment to space radiation environment. For modern semiconductor devices single event effects induced by hi
Autor:
Pavel A. Chubunov, Vasily S. Anashin, Kays B. Bu-Khasan, Sergei A. Iakovlev, Aleksandr E. Koziukov, Timofey A. Maksimenko
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
Short test results for 18 different commercial power metal-oxide-semiconductor field effect transistors (MOSFETs) obtained at Russian SEE Test Facilities during test campaign in 2017 are presented.
Autor:
Aleksandr E. Koziukov, Sergei A. Iakovlev, Tatiana S. Napolova, Pavel A. Chubunov, Sergei V. Kolpachkov, Vasiliy S. Anashin, Vladislav V. Lykov
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
The paper presents the single event effects (SEE) test results for some of drivers, analog to digital converters (ADC) and transceivers, which are candidate spacecraft electronics, obtained at Roscosmos Test Facilities during test campaigns in 2017.
Autor:
Aleksandr E. Koziukov, Alexander S. Bakerenkov, Viacheslav S. Pershenkov, V A Felitsyn, Vladimir V. Belyakov, Alexander S. Rodin, Nikita S. Glukhov
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
The electryical characteristics of widely used bipolar transistors on temperature before and after ionizing radiation impact were investigated. The operation at low temperatures can be considered as the worst case for bipolar devices.
Publikováno v:
Journal of Physical Science and Application. 8
Autor:
Aleksandr E. Koziukov, Vasily S. Anashin, Pavel A. Chubunov, Sergey A. Iakovlev, Konstantin Zh. Faradian, Aleksandr M. Chlenov, Anastasia A. Kalashnikova
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
In this work we present single event effects (SEE) test results for selection of amplifiers which are potential space candidates obtained at Roscosmos Test Facilities during test campaigns in 2016.
Autor:
Kais B. Bu-Khasan, Timofey A. Maksimenko, Aleksandr M. Chlenov, Sergey A. Iakovlev, Aleksandr E. Koziukov, Pavel A. Chubunov, Vasily S. Anashin
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
the paper presents single event effects (SEE) test results for some commercial power MOSFETs obtained at Roscosmos SEE Test Facilities during test campaign in October 2016.