Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Aleksandr, Kolchin"'
Autor:
Aleksandr, Kolchin, Dmitrii, Shuleiko, Mikhail, Martyshov, Aleksandra, Efimova, Leonid, Golovan, Denis, Presnov, Tatiana, Kunkel, Victoriia, Glukhenkaya, Petr, Lazarenko, Pavel, Kashkarov, Stanislav, Zabotnov, Sergey, Kozyukhin
Publikováno v:
Materials (Basel, Switzerland). 15(10)
Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::71fb676a7dc31a4c5a55f617488d4123
https://pubmed.ncbi.nlm.nih.gov/35629526
https://pubmed.ncbi.nlm.nih.gov/35629526
Autor:
Stanislav Zabotnov, Aleksandr Kolchin, Dmitrii Shuleiko, Denis Presnov, Tatiana Kaminskaya, Petr Lazarenko, Victoriia Glukhenkaya, Tatiana Kunkel, Sergey Kozyukhin, Pavel Kashkarov
Publikováno v:
Micro; Volume 2; Issue 1; Pages: 88-99
Ge2Sb2Te5 based devices attract the attention of researchers due to wide opportunities in designing phase change memory. Herein, we studied a possibility to fabricate periodic micro- and nanorelief at surfaces of Ge2Sb2Te5 thin films on silicon oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb659d41d4e1db95ca67019de24eff09
Autor:
Aleksandr Kolchin, Dmitrii Shuleiko, Mikhail Martyshov, Aleksandra Efimova, Leonid Golovan, Denis Presnov, Tatiana Kunkel, Victoriia Glukhenkaya, Petr Lazarenko, Pavel Kashkarov, Stanislav Zabotnov, Sergey Kozyukhin
Publikováno v:
Materials; Volume 15; Issue 10; Pages: 3499
Ge2Sb2Te5 (GST225) looks to be a promising material for rewritable memory devices due to its relatively easy processing and high optical and electrophysical contrast for the crystalline and amorphous phases. In the present work, we combined the possi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8a6bde9f3e07c85050a705156b8ff5d
https://doi.org/10.3390/ma15103499
https://doi.org/10.3390/ma15103499