Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Aleksander M. Wrobel"'
Autor:
Aleksander M. Wrobel, Pawel Uznanski
Publikováno v:
Plasma Processes and Polymers. 20
Autor:
Aleksander M. Wrobel, Pawel Uznanski
Publikováno v:
Plasma Processes and Polymers. 20:2200154
Autor:
Joanna Zakrzewska, Aleksander M. Wrobel, Jacek Tyczkowski, Agnieszka Walkiewicz-Pietrzykowska, Pawel Uznanski, Jacek Balcerzak, Krzysztof Jankowski
Publikováno v:
Applied Organometallic Chemistry. 34
Autor:
Jacek Balcerzak, Agnieszka Walkiewicz-Pietrzykowska, Jacek Tyczkowski, Bartosz Glebocki, Joanna Zakrzewska, Aleksander M. Wrobel, Pawel Uznanski
Publikováno v:
Surface and Coatings Technology. 350:686-698
The motivation for this contribution is the search for thin-film silicon oxycarbide (SiOC) materials suitable for modern electronics with good chemical/thermal stability, good barrier properties and conformal coverage, which can be deposited on rigid
Autor:
Pawel Uznanski, Aleksander M. Wrobel
Publikováno v:
Plasma Processes and Polymers. 18:2000240
Autor:
Pawel Uznanski, Aleksander M. Wrobel
Publikováno v:
Plasma Processes and Polymers. 18:2000241
Publikováno v:
Chemical Vapor Deposition. 21:307-318
Amorphous hydrogenated silicon oxycarbide (a-SiCO:H) thin films are produced by remote microwave hydrogen plasma CVD using 1,1,3,3-tetramethyldisiloxane precursor. The effect of substrate temperature (TS) on the chemical structure and some properties
Publikováno v:
Current Organic Chemistry. 21
Publikováno v:
Chemical Vapor Deposition. 20:112-117
The effect of substrate temperature (TS) on the chemical structure, surface morphology, density, and adhesion to a substrate of a-SiC:H films is reported. The increase in TS from 30 °C to 400 °C causes the elimination of organic moieties from the f
Publikováno v:
Chemical Vapor Deposition. 19:242-250
Amorphous, hydrogenated, silicon carbide (a-SiC:H) films are deposited in the remote hydrogen microwave plasma (RP-CVD) process using diethylsilane as a single-source precursor. The effect of substrate temperature (TS) on the kinetics of RP-CVD, chem