Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Aleksander B, Mosberg"'
Autor:
Christian Vollmer, Demie Kepaptsoglou, Jan Leitner, Aleksander B. Mosberg, Khalil El Hajraoui, Ashley J. King, Charlotte L. Bays, Paul F. Schofield, Tohru Araki, Quentin M. Ramasse
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract Organic matter in extraterrestrial samples is a complex material that might have played an important role in the delivery of prebiotic molecules to the early Earth. We report here on the identification of nitrogen-containing compounds such a
Externí odkaz:
https://doaj.org/article/83b6a0871c1f45029b7d10c5de849618
Autor:
Erik D. Roede, Aleksander B. Mosberg, Donald M. Evans, Edith Bourret, Zewu Yan, Antonius T. J. van Helvoort, Dennis Meier
Publikováno v:
APL Materials, Vol 9, Iss 2, Pp 021105-021105-6 (2021)
Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO3. Surface charging is achieved by local ion (positive charging) and electron (positive and neg
Externí odkaz:
https://doaj.org/article/4b9904712bbe488892424b394f407187
Autor:
Sverre Magnus Selbach, Dennis Meier, Aleksander B. Mosberg, Edith Bourret, Didrik Rene Småbråten, Zewu Yan, Donald M. Evans, Per Erik Vullum, Theodor S. Holstad, Antonius T. J. van Helvoort
Publikováno v:
Nano Letters
Nano Letters, 21 (8)
Nano Letters, 21 (8)
Dislocations are 1D topological defects with emergent electronic properties. Their low dimensionality and unique properties make them excellent candidates for innovative device concepts, ranging from dislocation-based neuromorphic memory to light emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ba2b1aa74117f9ada9503cd8907a09c
https://doi.org/10.1021/acs.nanolett.0c04816
https://doi.org/10.1021/acs.nanolett.0c04816
Autor:
Aleksander B. Mosberg
Publikováno v:
Microscopy and Microanalysis. 27:1022-1024
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91d21cbc5962281dce1830ff88363c6a
https://doi.org/10.1017/s143192762100386x
https://doi.org/10.1017/s143192762100386x
Publikováno v:
Microscopy and Microanalysis. 28:20-21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b46cb0ef22767e2e9c0c5e5a87c0862
https://doi.org/10.1017/s1431927622000988
https://doi.org/10.1017/s1431927622000988
Autor:
Erik D. Roede, Konstantin Shapovalov, Thomas J. Moran, Aleksander B. Mosberg, Zewu Yan, Edith Bourret, Andres Cano, Bryan D. Huey, Antonius T. J. van Helvoort, Dennis Meier
Publikováno v:
Advanced Materials
Advanced Materials, 34 (36)
Advanced Materials, 34 (36)
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of nonvolatile memory, memristor technology, and electronic components with ultrasmall feature size. Electric fields, for example, can change the domain wall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40e16eef50f6cabb76d4751785ccfc9b
https://doi.org/10.1002/adma.202202614
https://doi.org/10.1002/adma.202202614
Autor:
Aleksander B. Mosberg, Erik Dobloug Roede, Antonius T. J. van Helvoort, Edith Bourret, Zewu Yan, Dennis Meier, Donald M. Evans
Publikováno v:
APL Materials, 9 (2)
APL Materials, Vol 9, Iss 2, Pp 021105-021105-6 (2021)
APL Materials, vol 9, iss 2
APL Materials
APL Materials, Vol 9, Iss 2, Pp 021105-021105-6 (2021)
APL Materials, vol 9, iss 2
APL Materials
Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO3. Surface charging is achieved by local ion (positive charging) and electron (positive and neg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e277e6c31b00403bc0ec96f2fdf0ec82
https://hdl.handle.net/20.500.11850/469366
https://hdl.handle.net/20.500.11850/469366
Autor:
Aleksander B. Mosberg, Ursula Ludacka, Dennis Meier, Donald M. Evans, Antonius T. J. van Helvoort, Theodor S. Holstad
Publikováno v:
Microscopy and Microanalysis. 27:1188-1189
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edd5f0898c07835d0d915951121955fe
https://doi.org/10.1017/s1431927621004475
https://doi.org/10.1017/s1431927621004475
Autor:
David Z. Gao, Theodor S. Holstad, Dennis Meier, Konstantin Shapovalov, Per Erik Vullum, Jaakko Akola, Edith Bourret, Donald M. Evans, Sverre Magnus Selbach, Antonius T. J. van Helvoort, Aleksander B. Mosberg, Zewu Yan, Didrik Rene Småbråten, Anup L. Dadlani, Jan Torgersen
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nature Materials
instname
Nature Materials
Utilizing quantum effects in complex oxides, such as magnetism, multiferroicity and superconductivity, requires atomic-level control of the material’s structure and composition. In contrast, the continuous conductivity changes that enable artificia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06682626fd6973c3cae587dd2c02f602
http://hdl.handle.net/10261/230744
http://hdl.handle.net/10261/230744
Autor:
Donald M, Evans, Theodor S, Holstad, Aleksander B, Mosberg, Didrik R, Småbråten, Per Erik, Vullum, Anup L, Dadlani, Konstantin, Shapovalov, Zewu, Yan, Edith, Bourret, David, Gao, Jaakko, Akola, Jan, Torgersen, Antonius T J, van Helvoort, Sverre M, Selbach, Dennis, Meier
Publikováno v:
Nature materials. 19(11)
Utilizing quantum effects in complex oxides, such as magnetism, multiferroicity and superconductivity, requires atomic-level control of the material's structure and composition. In contrast, the continuous conductivity changes that enable artificial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::888af9ff8bda4ac7e7802b58288347f4
https://pubmed.ncbi.nlm.nih.gov/33603189
https://pubmed.ncbi.nlm.nih.gov/33603189