Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Aleks Aidla"'
Autor:
Aile Tamm, Aleks Aidla, Raul Rammula, Kaupo Kukli, Jaan Aarik, Hugo Mändar, Väino Sammelselg, Harry Alles, Tauno Kahro, Jaakko Niinistö, Lauri Aarik
Publikováno v:
Thin Solid Films. 565:37-44
Atomic layer deposition of ZrO2 films from tris(dimethylamino)cyclopentadienylzirconium CpZr(NMe2)3 and H2O, was investigated using real-time characterization of the growth process and post-growth measurements of the films. Self-limited nature of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ea33fe451b8226300c0bba3a918c8f9
https://doi.org/10.1016/j.tsf.2014.06.052
https://doi.org/10.1016/j.tsf.2014.06.052
Autor:
Väino Sammelselg, Kaupo Kukli, Alma-Asta Kiisler, Aile Tamm, Aarne Kasikov, Jaan Aarik, Peeter Ritslaid, Jekaterina Kozlova, Jun Lu, Lauri Aarik, Hugo Mändar, Aleks Aidla, Lars Hultman
Publikováno v:
physica status solidi (a). 211:397-402
Real time monitoring of atomic layer deposition by quartz crystal microbalance (QCM) was used to follow the growth of ZrO2 thin films on graphene. The films were grown from ZrCl4 and H2O on graphene prepared by chemical vapor deposition method on 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7b09c3bd73b72bc12ef645ec1b5e9aa
https://doi.org/10.1002/pssa.201330106
https://doi.org/10.1002/pssa.201330106
Autor:
Aivar Tarre, Aleks Aidla, Ivan Netšipailo, Peeter Ritslaid, Jaan Aarik, Jelena Asari, Väino Sammelselg, Lauri Aarik
Publikováno v:
Thin Solid Films. 542:219-224
Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precurs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2d68a05bb1c0a7e32405614a1ca940
https://doi.org/10.1016/j.tsf.2013.06.079
https://doi.org/10.1016/j.tsf.2013.06.079
Autor:
Lauri Aarik, Aleks Aidla, Jekaterina Kozlova, Jaan Aarik, Kaupo Kukli, Jun Lu, Lars Hultman, Anna-Liisa Peikolainen, Mihkel Koel, Hugo Mändar, Kaspar Roosalu, Aile Tamm, Raul Rammula
Publikováno v:
Thin Solid Films. 538:16-20
Carbon nanoparticles were synthesized from 5-methylresorcinol and formaldehyde via base catalysed polycondensation reaction and distributed over silicon oxide wafers and aluminium oxide thin films. These particles essentially possessed monocrystallin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d162d79899db74e3a1ac09405f098fdc
https://doi.org/10.1016/j.tsf.2012.09.071
https://doi.org/10.1016/j.tsf.2012.09.071
Publikováno v:
Journal of Materials Research. 28:1680-1686
Textured epitaxial HfO2 thin films of monoclinic structure were grown on r-cut Al2O3 by atomic layer deposition from HfCl4 and H2O at temperatures 450-750 °C. The film-to-substrate out-of-plane orientation was determined to have a single (001)HfO2//
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a340e72c2e2c6caba75013bf54a3d13f
https://doi.org/10.1557/jmr.2013.120
https://doi.org/10.1557/jmr.2013.120
Autor:
Tõnis Arroval, Hugo Mändar, Mukesh C. Dimri, Aile Tamm, Tanel Tätte, Aleks Aidla, Uno Mäeorg, Jekaterina Kozlova, Kaupo Kukli, Raivo Stern
Publikováno v:
Journal of Crystal Growth. 343:21-27
Magnetic iron oxide films were grown by atomic layer deposition. The films were grown from ferrocene and ozone precursors on planar and 3D SiO 2 /Si substrates. Some substrates were pre-covered with self-assembled SnO 2 nanoparticles, prepared by hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0a89e9ce5a7378f01251d8f94747e25
https://doi.org/10.1016/j.jcrysgro.2011.09.062
https://doi.org/10.1016/j.jcrysgro.2011.09.062
Autor:
Aleks Aidla, Scott Houston Meiere, Ronald F. Spohn, Mikko Ritala, Timo Sajavaara, Kaupo Kukli, Indrek Jõgi, Tõnis Arroval, Jim Natwora, John Peck, Alma-Asta Kiisler, Jaan Aarik, David Thompson, Joan Geary, Markku Leskelä, Jun Lu, Mikko Laitinen
Publikováno v:
Thin Solid Films. 520:2756-2763
Ru thin films were grown on hydrogen terminated Si, SiO 2 , Al 2 O 3 , HfO 2 , and TiO 2 surfaces by atomic layer deposition from bis(2,5-dimethylpyrrolyl)ruthenium precursor and oxygen. The 4–20 nm thick films on these surfaces consisted of nanocr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2808eba9b12e0d8d65413e494d705958
https://doi.org/10.1016/j.tsf.2011.11.088
https://doi.org/10.1016/j.tsf.2011.11.088
Autor:
Väino Sammelselg, Aleks Aidla, Pertti Hakonen, Harry Alles, Martti Pärs, Aurélien Fay, Mihkel Rähn, Jekaterina Kozlova, M. Wiesner, Ahti Niilisk, Jaan Aarik
Publikováno v:
Open Physics, Vol 9, Iss 2, Pp 319-324 (2011)
Atomic layer deposition of HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180°C. HfO2 was also deposited in a two-step temperature pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aff7aa7358d49294b16160b5dfc923c
https://doaj.org/article/0220763fe23849dfb94555ff25f51e22
https://doaj.org/article/0220763fe23849dfb94555ff25f51e22
Autor:
Mihkel Rähn, Jekaterina Kozlova, Väino Sammelselg, Aurélien Fay, Martti Pärs, Aleks Aidla, Pertti Hakonen, Jaan Aarik, Harry Alles, Ahti Niilisk, M. Wiesner
Publikováno v:
Open Physics, Vol 9, Iss 2, Pp 293-299 (2011)
Atomic layer deposition of ultrathin HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180 degrees C. HfO2 was deposited also in a two-st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1807cdb671ee322ea01058bd5e730ce5
https://doaj.org/article/8f512ade21b94f679584353760decfcc
https://doaj.org/article/8f512ade21b94f679584353760decfcc
Autor:
Aleks Aidla, Mikko Ritala, Kaupo Kukli, Alma Asta Kiisler, Massimo Tallarida, Marianna Kemell, Jaan Aarik, Markku Leskelä, Jun Lu, Indrek Jõgi, Teet Uustare
Publikováno v:
Journal of Crystal Growth. 312:2025-2032
Ru thin films were grown on TiO 2 , Al 2 O 3 , HfO 2 , and ZrO 2 films as well as on HF-etched silicon and SiO 2 -covered silicon by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene, (CH 3 C 5 H 4 )(C 2 H 5 C 5 H 4 )Ru, and oxygen. The gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::746077598148e13f3b0d99a682634a3c
https://doi.org/10.1016/j.jcrysgro.2010.03.033
https://doi.org/10.1016/j.jcrysgro.2010.03.033