Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Alejandro Fasciszewski"'
Publikováno v:
Tecnura, Vol 23, Iss 61, Pp 23-30 (2019)
Contexto: En este trabajo se presenta el desarrollo y microfabricación de un sensor de gas cuyo funcionamiento se basa en las variaciones de su conductividad eléctrica en presencia de determinados gases. Para utilizar estos sensores en equipos port
Externí odkaz:
https://doaj.org/article/729cacda26b44d0d977a468df78da15e
Autor:
Jeffry H. Martinez, Mauricio Tosi, Alejandro Fasciszewski, Pablo A. Costanzo Caso, Laureano A. Bulus Rossini
Publikováno v:
2020 IEEE Congreso Bienal de Argentina (ARGENCON).
In this work, we present preliminary results obtained in the fabrication of photonic integrated circuits (PICs) based on silicon nitride platform. We use direct writing lithography with UV laser to define structures with sub-micrometric resolutions,
Autor:
Gustavo Adrian Torchia, Fabian Videla, Damián A. Presti, Valentín Guarepi, Alejandro Fasciszewski
This work presents the design, development and characterization of an integrated optical modulator based on a Mach Zehnder Interferometer (MZI) recorded inside x-cut Lithium Niobate (LNB) wafers. These optical circuits were fabricated by means of fem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56d9d8b7f265f28c37b24efb1b67a058
https://www.sciencedirect.com/science/article/pii/S0143816618305165?via=ihub
https://www.sciencedirect.com/science/article/pii/S0143816618305165?via=ihub
Autor:
Robert Birkner, Avi Cohen, Benedetta Triulzi, Ute Buttgereit, Mark Joyner, Erez Graitzer, Hiroyuki Miyashita, Carmelo Romeo, Alejandro Fasciszewski Zeballos
Publikováno v:
SPIE Proceedings.
One of the key parameters necessary to assure a good and reliable functionality of any integrated circuit is the Critical Dimension Uniformity (CDU). There are different contributors which impact the total CDU: mask CD uniformity, scanner and lens fi
Autor:
Antonio Mani, John C. Robinson, Alejandro Fasciszewski Zeballos, Pavel Izikson, Umberto Iessi, Sara Loi, Marco Polli
Publikováno v:
SPIE Proceedings.
The merits of hyper NA imaging using 193nm exposure wavelength with water immersion for 45nm is clear. Scanner focus and dose control is always improving to allow small DOF manufacturing in immersion lithography. However, other process parameters can