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Autor:
Rosalyn Koscica, Chen Shang, Kaiyin Feng, Eamonn T. Hughes, Christy Li, Alec Skipper, John E. Bowers
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 3, Pp n/a-n/a (2024)
Epitaxially grown quantum dot (QD) lasers in narrow pockets on patterned silicon photonics wafers present a key step toward full monolithic integration of on‐chip light sources. However, InAs QD lasers grown in deep and narrow pockets demonstrate l
Externí odkaz:
https://doaj.org/article/074249ae6db54030b766bf3a248c1fb0
