Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Alec H. Reader"'
Autor:
Stephen P. Best, Dirk E. W. Vandenhoudt, Alec H. Reader, Valentin Craciun, Aurel Andrei, Ian W. Boyd, Roger S. Hutton
Publikováno v:
Thin Solid Films. 255:290-294
We describe a novel technique fully compatible with silicon microelectronic technology for the synthesis of Ge nanocrystals. The approach followed involves UV-assisted low temperature dry oxidation of a strained Si 0.8 Ge 0.2 layer. Initially, oxidat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::026983b02e8d3069de5cade2b399f16c
https://doi.org/10.1016/0040-6090(94)05613-i
https://doi.org/10.1016/0040-6090(94)05613-i
Autor:
Dirk E. W. Vandenhoudt, F. J. G. Hakkens, W.J. Kersten, Alec H. Reader, P. H. Oosting, Ian W. Boyd, Valentin Craciun
Publikováno v:
Journal of Applied Physics. 75:1972-1976
Ultraviolet‐assisted low‐temperature (550 °C) dry oxidation of Si0.8Ge0.2 strained layers on (100)Si has been studied. The oxidation rate of this material was found to be a factor of 2 greater than that of pure Si oxidation under identical irrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77887e7bf904eafd20670a141cd35745
https://doi.org/10.1063/1.356320
https://doi.org/10.1063/1.356320
Publikováno v:
Applied Physics Letters. 65:3233-3235
A novel and simple technique for the synthesis of Ge nanocrystals embedded in SiO2 is reported. The method is fully compatible with silicon microelectronic technology and relies solely upon low temperature (only 550 °C) ultraviolet oxidation of Si0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::002fea1caad0773514f3826caf6a4526
https://doi.org/10.1063/1.112422
https://doi.org/10.1063/1.112422
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Journal of Applied Physics; 5/15/1991, Vol. 69 Issue 10, p7050, 7p
Publikováno v:
Journal of Electronic Materials; Mar1999, Vol. 28 Issue 3, p186-189, 4p
Autor:
Craciun, Valentin, Boyd, Ian W.
Publikováno v:
Applied Physics Letters; 12/19/1994, Vol. 65 Issue 25, p3233, 3p, 4 Diagrams
Publikováno v:
MRS Online Proceedings Library; 01/04/1988, Vol. 103, pN.PAG-1, 1p
Autor:
R.A. Levy
As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the fi
