Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Aleš Chvála"'
Autor:
Peter Šichman, Roman Stoklas, Stanislav Hasenöhrl, Dagmar Gregušová, Milan Ťapajna, Boris Hudec, Štefan Haščík, Tamotsu Hashizume, Aleš Chvála, Alexander Šatka, Ján Kuzmík
Publikováno v:
physica status solidi (a).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccbabafd89324f24c23e010586a57fa3
https://doi.org/10.1002/pssa.202200776
https://doi.org/10.1002/pssa.202200776
Autor:
Juraj Marek, Jozef Kozarik, Michal Minarik, Aleš Chvála, Matej Matus, Martin Donoval, Lubica Stuchlikova, Martin Weis
Publikováno v:
Materials; Volume 15; Issue 22; Pages: 8230
Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive uncla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7daf1fec57a2ecd466a02169ec145f0a
https://pubmed.ncbi.nlm.nih.gov/36431714
https://pubmed.ncbi.nlm.nih.gov/36431714
Autor:
Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč, Martin Florovič, Juraj Marek, Luboš Černaj, Patrik Príbytný, Daniel Donoval, Sylvain Laurent Delage, Jean-Claude Jacquet
Publikováno v:
ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN based high-electron mobility transistor (HEMT) grown on SiC substrate are presented. The measurement of temperature distribution on HEMT surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26c8be9f1da061095547ce9a92d2e889
https://doi.org/10.1115/ipack2018-8256
https://doi.org/10.1115/ipack2018-8256
Autor:
Martin Florovič, Róbert Szobolovszký, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage
Publikováno v:
Journal of Electrical Engineering
GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc47588bbab1ba806fd3074614f2571d
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 20, Iss 1, Pp 86-94 (2022)
This paper investigates a degradation of three types of automotive power MOSFETs through repetitive Unclamped Inductive Switching (UIS) test typically used to evaluate the avalanche robustness of power devices. It is not uncommon in switching applica
Externí odkaz:
https://doaj.org/article/f1406e2478db45edb25ddc30287ff739
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 361-368 (2021)
On-die testing can accelerate development of semiconductor devices, but poses certain challenges related to high frequency and high current switching. This paper describes design and development of a tester for double-pulse switching test and measure
Externí odkaz:
https://doaj.org/article/d2924298673f4413afdd8ee3d41699ed
Autor:
Aleš Chvála, Robert Szobolovszký, Jaroslav Kováč, Martin Florovič, Juraj Marek, Ľuboš Černaj, Daniel Donoval, Christian Dua, Sylvain L. Delage, Jean-Claude Jacquet
Publikováno v:
Journal of Electronic Packaging
In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN-based high-electron mobility transistor (HEMT) grown on a SiC substrate are presented. The measurement of temperature distribution on HEMT surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccc23def00f163e72ee62599923610e3