Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Aldis Šilėnas"'
Autor:
Putinas Kalinauskas, Laurynas Staišiūnas, Asta Grigucevičienė, Konstantinas Leinartas, Aldis Šilėnas, Dalia Bučinskienė, Eimutis Juzeliūnas
Publikováno v:
Materials, Vol 16, Iss 7, p 2785 (2023)
A photoelectrode for hydrogen evolution reaction (HER) is proposed, which is based on p-type silicon (p-Si) passivated with an ultrathin (10 nm) alumina (Al2O3) layer and modified with microformations of a nickel catalyst. The Al2O3 layer was formed
Externí odkaz:
https://doaj.org/article/501586776a9b486d888d78a1ed1f3959
Autor:
Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Asta Grigucevičienė, Remigijus Juškėnas, Konstantinas Leinartas, Andžej Lučun, Kazimieras Petrauskas, Algirdas Selskis, Laurynas Staišiūnas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis
Publikováno v:
Materials, Vol 15, Iss 12, p 4300 (2022)
The high efficiency of perovskite solar cells strongly depends on the quality of perovskite films and carrier extraction layers. Here, we present the results of an investigation of the photoelectric properties of solar cells based on perovskite films
Externí odkaz:
https://doaj.org/article/4e55432de2764a188068b9b4ce497345
Autor:
Maksimas Anbinderis, Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Andžej Lučun, Aldis Šilėnas, Algirdas Sužiedėlis
Publikováno v:
Sensors, Vol 21, Iss 13, p 4487 (2021)
The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-in
Externí odkaz:
https://doaj.org/article/a769fd168cdd448196a446a2496016ee
Autor:
Jonas Gradauskas, Steponas Ašmontas, Algirdas Sužiedėlis, Aldis Šilėnas, Viktoras Vaičikauskas, Aurimas Čerškus, Edmundas Širmulis, Ovidijus Žalys, Oleksandr Masalskyi
Publikováno v:
Applied Sciences, Vol 10, Iss 21, p 7483 (2020)
In the present work we reveal the existence of the hot carrier photovoltage induced across a p–n junction in addition to the classical carrier generation-induced and thermalization-caused photovoltages. On the basis of the solution of the different
Externí odkaz:
https://doaj.org/article/7cc17516151d4f38bb8f8d8a810eb222
Autor:
Steponas Ašmontas, Maksimas Anbinderis, Jonas Gradauskas, Remigijus Juškėnas, Konstantinas Leinartas, Andžej Lučun, Algirdas Selskis, Laurynas Staišiūnas, Sandra Stanionytė, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis
Publikováno v:
Materials, Vol 13, Iss 12, p 2857 (2020)
Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films be
Externí odkaz:
https://doaj.org/article/2a2d43a56ceb44f4b3a9706c248f28e6
Autor:
Steponas Ašmontas, Maksimas Anbinderis, Aurimas Čerškus, Jonas Gradauskas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis, Vladimir Umansky
Publikováno v:
Sensors, Vol 20, Iss 3, p 829 (2020)
We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above differe
Externí odkaz:
https://doaj.org/article/250a8e097a564424af52c65a3de54473
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 147-149 (2014)
Formation technology of graded-gap GaAs-AlxGa1–xAs sollar cell structure separated from GaAs substrate is developed. The technology composed of mechanical polishing and multi-step wet chemical etching enables to produce mechanically robust, comfort
Externí odkaz:
https://doaj.org/article/4106d09657d349e3b9d061fb1cfc812b
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 135-137 (2014)
The THz radiation reflection, absorption and emission spectra of conductive n-GaAs/air surface are considered. The influence of thermostimulated surface plasmon-phonon (SPP) polariton oscillations on THz radiation reflection, absorption and emission
Externí odkaz:
https://doaj.org/article/7541fb4096ff46e2afeae78b90343cfb
Autor:
Aldis Šilėnas
Publikováno v:
Lithuanian Journal of Physics. 44:49-57
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a781bfab8baf4d41e557e117395c09f0
https://doi.org/10.3952/lithjphys.44106
https://doi.org/10.3952/lithjphys.44106