Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Aldis Šilénas"'
Autor:
Maksimas Anbinderis, Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Andžej Lučun, Aldis Šilėnas, Algirdas Sužiedėlis
Publikováno v:
Sensors, Vol 21, Iss 13, p 4487 (2021)
The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-in
Externí odkaz:
https://doaj.org/article/a769fd168cdd448196a446a2496016ee
Autor:
Jonas Gradauskas, Steponas Ašmontas, Algirdas Sužiedėlis, Aldis Šilėnas, Viktoras Vaičikauskas, Aurimas Čerškus, Edmundas Širmulis, Ovidijus Žalys, Oleksandr Masalskyi
Publikováno v:
Applied Sciences, Vol 10, Iss 21, p 7483 (2020)
In the present work we reveal the existence of the hot carrier photovoltage induced across a p–n junction in addition to the classical carrier generation-induced and thermalization-caused photovoltages. On the basis of the solution of the different
Externí odkaz:
https://doaj.org/article/7cc17516151d4f38bb8f8d8a810eb222
Autor:
Steponas Ašmontas, Maksimas Anbinderis, Aurimas Čerškus, Jonas Gradauskas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis, Vladimir Umansky
Publikováno v:
Sensors, Vol 20, Iss 3, p 829 (2020)
We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above differe
Externí odkaz:
https://doaj.org/article/250a8e097a564424af52c65a3de54473
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 147-149 (2014)
Formation technology of graded-gap GaAs-AlxGa1–xAs sollar cell structure separated from GaAs substrate is developed. The technology composed of mechanical polishing and multi-step wet chemical etching enables to produce mechanically robust, comfort
Externí odkaz:
https://doaj.org/article/4106d09657d349e3b9d061fb1cfc812b
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 135-137 (2014)
The THz radiation reflection, absorption and emission spectra of conductive n-GaAs/air surface are considered. The influence of thermostimulated surface plasmon-phonon (SPP) polariton oscillations on THz radiation reflection, absorption and emission
Externí odkaz:
https://doaj.org/article/7541fb4096ff46e2afeae78b90343cfb
Autor:
Aldis Šilénas, O. Žalys, Jonas Gradauskas, Viktoras Vaičikauskas, Edmundas Širmulis, Steponas Ašmontas, Vitas Svedas, Vytautas Vaičiūnas, Vitaliy Kostylyov, Algirdas Sužiedelis
Publikováno v:
Materials Science-Poland, Vol 36, Iss 2, Pp 337-340 (2018)
Photovoltage formation across Si p-n junction exposed to laser radiation is experimentally investigated. Illumination of the junction with 1.06 μm wavelength laser radiation leads to formation of classical photovoltage Uphdue to intense electronhole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5b025b280125456bd758604762a1774
https://doi.org/10.1515/msp-2017-0106
https://doi.org/10.1515/msp-2017-0106