Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Alden Acheta"'
Autor:
Oleg Kritsun, Bruno La Fontaine, Yongdong Liu, Catherine Volkman, Chandra Saravanan, Alden Acheta, Prasad Dasari
Publikováno v:
SPIE Proceedings.
Demanding sub-45 nm node lithographic methodologies such as double patterning (DPT) pose significant challenges for overlay metrology. In this paper, we investigate scatterometry methods as an alternative approach to meet these stringent new metrolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b641f977fba33fef394e0a0a51f4bcb
https://doi.org/10.1117/12.774736
https://doi.org/10.1117/12.774736
Autor:
Harry J. Levinson, Thomas Wallow, Junyan Dai, James Yu, Ryoung-han Kim, Alden Acheta, Hiram Cervera, Thomas Nowak, Nikolaos Bekiaris, Jongwook Kye
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
We have developed a unique resist stabilization process for double patterning that uses 172 nm UV curing to 'freeze' a first photoresist pattern prior to application and patterning of a second photoresist film. 172 nm cure offers many potential advan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c26aa9f45e337251dea987358bb5006
https://doi.org/10.1117/12.774205
https://doi.org/10.1117/12.774205
Autor:
Srinivasan Nirmalgandhi, Chandra Saravanan, Kunie Primak, Rahul Korlahalli, Jan Hauschild, Harry J. Levinson, Anita Pici, Bruno La Fontaine, Alden Acheta, Richard Sandberg, Mircea Dusa, Oleg Kritsun, Kevin R. Lensing
Publikováno v:
SPIE Proceedings.
Scatterometry techniques are used to characterize the CD uniformity, focus and dose control, as well as the image contrast of a hyper-NA immersion lithography scanner. Results indicate very good scanner control and stability of these parameters, as w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c905a14cfd09c7cd226734473abd4e
https://doi.org/10.1117/12.715971
https://doi.org/10.1117/12.715971
Autor:
Scott A. Bell, Bruno La Fontaine, Alden Acheta, Harry J. Levinson, Tom Wallow, Adam R. Pawloski
Publikováno v:
SPIE Proceedings.
A method is presented to determine a transfer function for line edge roughness (LER) from the photoresist pattern through the etch process into the underlying material, such as a polysilicon gate. The image fading technique was employed to determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3621afbc0b4dbfd364bbcb02565acf93
https://doi.org/10.1117/12.652206
https://doi.org/10.1117/12.652206
Autor:
M. Jaramillo, Adam R. Pawloski, Scott A. Bell, Alden Acheta, S. Cassel, R. H. Kim, Tom Wallow, Peng Zhang
Publikováno v:
SPIE Proceedings.
As line edge roughness (LER) becomes one of the critical lithography challenges, there is a growing interest in applying surface conditioner solutions during post-develop process to reduce LER. In this paper, we evaluated the combined effect of surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bf76745d05b0dd8bfb38330c064be42
https://doi.org/10.1117/12.656648
https://doi.org/10.1117/12.656648
Autor:
Bruno La Fontaine, Beverly Cheung, Harish Kumar Bolla, Bhanwar Singh, Anita Fumar-Pici, Alden Acheta, Yunfei Deng, Mircea Dusa, Harry J. Levinson
Publikováno v:
Optical Microlithography XVIII.
In this paper we present a method to characterize scattered light in lithography scanners based on the measurement of the modulation transfer function (MTF) of the lens. This method provides a description of scattered light at all length scales, or s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::379d35f4290fca36388d87ad22fd6e79
https://doi.org/10.1117/12.601188
https://doi.org/10.1117/12.601188
Autor:
Koji Toyoda, Harry J. Levinson, Ivan Lalovic, German E. Rylov, Alden Acheta, Eric Kent, Daniel J. Colon, Kazuhiro Takahashi, Nigel R. Farrar
Publikováno v:
Optical Microlithography XVIII.
In this work, we demonstrate a resolution enhancement technique for DUV lithography in which the light source spectrum is modified in order to improve the imaging performance of given device patterns. With this technique, termed RELAX, the imaging de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::339605b77a4fbb7fa74b896237ee586c
https://doi.org/10.1117/12.601002
https://doi.org/10.1117/12.601002
Publikováno v:
SPIE Proceedings.
Previous work has demonstrated the dependence of photoresist line edge roughness (LER) on the image-log-slope of the aerial image over a wide range of conditions; however, this relationship does not describe the influence of other factors such as pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89c9eca5195d17db472d9e25765e6485
https://doi.org/10.1117/12.599848
https://doi.org/10.1117/12.599848
Publikováno v:
SPIE Proceedings.
A technique was developed to investigate the role of aerial image contrast and image-log-slope (ILS) on the resulting magnitude of line edge roughness (LER) in resist with the goal of determining if the minimization of LER in current state-of-the-art
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe1cba768ac917909e20209e86ce899e
https://doi.org/10.1117/12.537103
https://doi.org/10.1117/12.537103
Autor:
Alden Acheta, Timothy Michaelson, Jeffrey D. Byers, Andrew Thomas Jamieson, Carlton G Willson, Adam R. Pawloski
Publikováno v:
SPIE Proceedings.
As critical dimensions in microlithography become ever smaller and the importance of line edge roughness becomes more pronounced, it is becoming increasingly important to gain a fundamental understanding of how the chemical composition of modern phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d391291aad948d5025522bf32bf48529
https://doi.org/10.1117/12.537658
https://doi.org/10.1117/12.537658