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Autor:
Meingast, Arno, Navarro Quezada, Andrea, Devillers, Thibout, Kovacs, Andras, Albu, Mihela, Fladischer, Stefanie, Bonanni, Alberta, Kothleitner, Gerald
Publikováno v:
Semiconductor science and technology 30(3), 035002 (2015). doi:10.1088/0268-1242/30/3/035002
Modulated structures of gallium nitride (GaN) doped with transition metal ions (here Fe, Mn) are investigated by analytical (scanning) transmission electron microscopy to gain insight into the structural arrangement and chemical composition of the ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3364::07683bdfa7e8892192fe6c87b0f893cb
https://hdl.handle.net/2128/8304
https://hdl.handle.net/2128/8304