Hard superconducting gap in germanium

Autor: Alberto Tosato, Vukan Levajac, Ji-Yin Wang, Casper J. Boor, Francesco Borsoi, Marc Botifoll, Carla N. Borja, Sara Martí-Sánchez, Jordi Arbiol, Amir Sammak, Menno Veldhorst, Giordano Scappucci

Publikováno v: Communications Materials, Vol 4, Iss 1, Pp 1-9 (2023)

The difficulty in obtaining a superconducting gap free of subgap states has hindered progress with hybrid superconductor-semiconductor devices in germanium. Here, this challenge is addressed by using a germanosilicide parent superconductor to contact

Externí odkaz: https://doaj.org/article/0b20cf9da46c4d84a1481cb03131ffc9

A high-mobility hole bilayer in a germanium double quantum well

Autor: Alberto Tosato, Beatrice Ferrari, Amir Sammak, Alexander R. Hamilton, Menno Veldhorst, Michele Virgilio, Giordano Scappucci

Publikováno v: Advanced Quantum Technologies, 5(5)

We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels wi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5bbce4eb0225cfffb3cd5c0c692f750a
http://arxiv.org/abs/2201.06862

Effect of quantum Hall edge strips on valley splitting in silicon quantum wells

Autor: Payam Amin, Mario Lodari, Merritt Losert, James S. Clarke, Brian Paquelet Wuetz, Peter L. Bavdaz, Mark Friesen, Giordano Scappucci, Alberto Tosato, Lucas Stehouwer, Menno Veldhorst, Susan Coppersmith, Amir Sammak

Publikováno v: Physical Review Letters, 125(18)

We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::289b67781e8fe327be3c31eefc0413b8

Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology

Autor: Amir Sammak, Diego Sabbagh, Nico W. Hendrickx, Mario Lodari, Brian Paquelet Wuetz, Alberto Tosato, LaReine Yeoh, Monica Bollani, Michele Virgilio, Markus Andreas Schubert, Peter Zaumseil, Giovanni Capellini, Menno Veldhorst, Giordano Scappucci

Publikováno v: Advanced functional materials
(2019). doi:10.1002/adfm.201807613
info:cnr-pdr/source/autori:Sammak A.; Sabbagh D.; Hendrickx N.W.; Lodari M.; Paquelet Wuetz B.; Tosato A.; Yeoh L.; Bollani M.; Virgilio M.; Schubert M.A.; Zaumseil P.; Capellini G.; Veldhorst M.; Scappucci G./titolo:Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology/doi:10.1002%2Fadfm.201807613/rivista:Advanced functional materials (Print)/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume
Advanced Functional Materials, 29(14)
Advanced Functional Materials, 29

Buried-channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc883f562798a847dbe3f73438320dd6
http://resolver.tudelft.nl/uuid:ded616da-2237-4cb4-bbe3-4c508f3226ca