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pro vyhledávání: '"Alberto Salinaro"'
Publikováno v:
Materials Science Forum. :512-515
We report on the electrical characterization of the Metal-Oxide-Semiconductor (MOS) interfacerealized on in-situ Ge-doped n-type 4H-SiC epilayers grown by Chemical Vapour Deposition(CVD). In order to study the relevance of this novel material for MOS
Autor:
Gregor Pobegen, Alberto Salinaro, Bernd Zippelius, Thomas Aichinger, Peter Friedrichs, Lothar Frey, Dethard Peters
Publikováno v:
IEEE Transactions on Electron Devices. 62:155-163
This paper shows a successful transfer of the charge pumping (CP) method, which is extensively applied on silicon (Si) transistors, to Si carbide (SiC) lateral MOSFETs to characterize the quality of the SiC/SiO2 interface near the conduction and vale
Publikováno v:
Materials Science Forum. :959-962
We study the impact of positive bias temperature stress and hot carrier stress on lateral 4H-SiC nMOSFETs. These degradation mechanisms are prominent in silicon based devices where both create oxide as well as interface traps. For SiC MOSFETs only li